MRAM (Magnetic Random Access Memory) reading circuit using low-voltage pulse

Abstract

The invention discloses an MRAM (Magnetic Random Access Memory) reading circuit using a low-voltage pulse. The reading circuit comprises a plurality of equivalent MOS (Metal Oxide Semiconductor) transistors, a reference unit combination and a comparator which are arranged in a row and connected in parallel; in the plurality of MOS transistors, k MOS transistors are connected in parallel and then connected with k reference units of the reference unit combination in series; each remaining MOS transistor Pax in the plurality of MOS transistors is connected with a read storage unit in series; thecomparator is located between the Ax and B points; and whether the storage unit is in a P state or an AP state is determined through a voltage difference between the two points. According to the MRAMreading circuit using the low-voltage pulse, a read operation is performed by use of the low-voltage pulse, and the read power consumption of the MRAM reading circuit is effectively reduced.

Description

technical field [0001] The invention belongs to the field of semiconductor chip memory, in particular to an MRAM readout circuit using low-voltage pulses. Background technique [0002] Magnetic Random Access Memory (MRAM) is an emerging non-volatile storage technology. It has high-speed read and write speed and high integration, and can be rewritten infinitely. MRAM can be read and written as fast as SRAM / DRAM, and can permanently retain data after power failure like Flash memory. [0003] MRAM has very good economy and performance. Its silicon chip area occupied per unit capacity has great advantages over SRAM, and also has advantages over NOR Flash, which is often used in such chips, and has greater advantages than embedded NOR Flash. . The MRAM read and write delay is close to the best SRAM, and the power consumption is the best among various memory and storage technologies; and MRAM is compatible with standard CMOS semiconductor processes, while DRAM and Flash are not...

AI Technical Summary

Problems solved by technology

When measuring the resistance of a memory cell, direct current is unavoidable, and the power consumption of this readout circuit accounts for most of the MRAM read power consumption.

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