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Super-clean graphene and preparation method thereof

A graphene, ultra-clean technology, applied in the field of materials, can solve the problems of limited application, graphene light transmittance and conductivity decline, many defects, etc., and achieve the effect of simple and effective preparation method, efficient non-destructive transfer, and excellent structure

Active Publication Date: 2018-05-25
PEKING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The graphene prepared by the redox method has many defects due to the chemical reduction reaction process, and the oxidized groups are difficult to completely reduce, resulting in serious doping, which seriously limits its application in the field of electronics.
The chemical vapor deposition method is suitable for large-scale preparation of graphene thin film materials, but there are a large amount of amorphous carbon pollutants on the surface of the prepared graphene, and the existence of these pollutants leads to a significant decrease in the light transmittance and electrical conductivity of graphene.
At the same time, the continuous clean size under the transmission electron microscope is only at the nanometer level, which severely limits the imaging and observation range of graphene as a transmission grid substrate.

Method used

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  • Super-clean graphene and preparation method thereof

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Experimental program
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Effect test

Embodiment 1

[0044] Embodiment 1, preparation ultra-clean graphene

[0045] (1) Use dilute hydrochloric acid and deionized water with a mass fraction of 5% to clean the copper foil (produced by Alfa Aesar, with a purity of 99.8%, and a thickness of 25 μm), and place the copper foil and foamed copper in close contact with a magnetic control device. Put the casing in the casing, and then place the casing in a tube furnace. Under a hydrogen atmosphere with a flow rate of 100sccm and a system pressure of 100Pa, raise the temperature of the furnace body to 1020°C and keep it for 30min;

[0046] (2) Keep the temperature of the furnace body at 1020° C., change the flow rate of hydrogen into hydrogen gas of 11 sccm, and feed in methane gas with a flow rate of 7 sccm. The system pressure is 50 Pa, and keep for 30 s;

[0047] (3) Use a magnet to drag the casing loaded with copper foil out of the high-temperature zone, and rapidly lower the temperature of the sample to room temperature at a cooling r...

Embodiment 2

[0053] Embodiment 2, preparation ultra-clean graphene

[0054] (1) Using phosphoric acid and ethylene glycol solution with a mass ratio of 3:1 as the electrolyte, copper foil (produced by Alfa Aesar, with a purity of 99.8%, and a thickness of 25 μm) was connected to the positive electrode, and polished at a DC current of 0.5 A for 30 min. Place the copper foil and foamed copper in close contact with a casing with a magnetic control device, then place the casing in a tube furnace, and raise the temperature of the furnace body to 1040°C under a hydrogen atmosphere with a flow rate of 300 sccm, and the system The pressure is 300Pa, keep it for 50min;

[0055] (2) Keep the temperature of the furnace body at 1040° C., change the flow rate of hydrogen into 500 sccm of hydrogen gas, feed into methane gas with a flow rate of 0.36 sccm, and keep the system pressure at 500 Pa for 24 hours;

[0056] (3) Use a magnet to drag the sleeve loaded with copper foil out of the high temperature ...

Embodiment 3

[0062] Embodiment 3, preparation ultra-clean graphene

[0063] (1) Use dilute hydrochloric acid and deionized water with a mass fraction of 5% to clean the copper foil (produced by Alfa Aesar, with a purity of 99.8%, and a thickness of 25 μm), and place the copper foil and foamed copper in close contact with a magnetic control device. Put the casing in the casing, and then place the casing in a tube furnace. Under a hydrogen atmosphere with a flow rate of 100sccm and a system pressure of 100Pa, raise the temperature of the furnace body to 1020°C and keep it for 30min;

[0064] (2) Keep the temperature of the furnace body at 1020° C., change the flow rate of hydrogen into 11 sccm of hydrogen gas, and feed into methane gas with a flow rate of 1 sccm. The system pressure is 48 Pa, and keep for 300 s;

[0065] (3) Use a magnet to drag the casing loaded with copper foil out of the high-temperature zone, and rapidly lower the temperature of the sample to room temperature at a coolin...

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Abstract

The invention discloses super-clean graphene and a preparation method thereof. The preparation method of the super-clean graphene comprises the following steps: putting foam copper on a copper substrate, and attaching; leading carbon source gas and hydrogen to perform chemical vapor deposition; after deposition is completed, obtaining the super-clean graphene at the contact surface of the copper substrate and the foam copper. The preparation method has the advantages that the preparation method is simple and is suitable for large-scale production, the continuous clean area reaches the sub-centimeter level, and the preparation method is suitable for the fields of electronics, optics and the like.

Description

technical field [0001] The invention belongs to the field of materials, and in particular relates to an ultra-clean graphene and a preparation method thereof. Background technique [0002] Graphene is a two-dimensional film material formed by a single layer of carbon atoms arranged in a hexagonal symmetrical honeycomb structure. Due to the excellent properties of graphene in electricity, optics, heat and mechanics, it has attracted extensive attention in the fields of physics, chemistry, biology and materials since its discovery. For example, single-layer graphene has a Dirac cone-shaped energy band structure, and at the Fermi level, energy and momentum have a linear dispersion relationship. This unique energy band structure determines that graphene has extremely high carrier mobility, so graphene has gradually become a favorable substitute for traditional silicon-based electronic materials. Because graphene is a single atomic layer thin film material, its light absorption...

Claims

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Application Information

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IPC IPC(8): C01B32/186
CPCC01P2002/82C01P2004/04
Inventor 刘忠范彭海琳林立张金灿
Owner PEKING UNIV
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