Lithium ion battery pentabasic high-entropy oxide nano-film as well as preparation and application thereof
A lithium-ion battery and nano-film technology, which is applied in the field of lithium-ion battery five-element high-entropy oxide nano-film and its preparation and application, can solve the problems of volume expansion, poor cycle stability, and low charge-discharge specific capacity.
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Embodiment 1
[0028] Adopt laser molecular beam epitaxy deposition technology to prepare high-entropy oxide (Mg 0.2 co 0.2 Ni 0.2 Cu 0.2 Zn 0.2 )O thin film: According to the molar ratio (0.2 / 0.2 / 0.2 / 0.2 / 0.2), magnesium oxide, cobalt oxide, nickel oxide, copper oxide and zinc oxide are high-energy ball milled for 10-15 hours, mixed evenly and pressed into tablets to make laser molecules The target used for beam epitaxy deposition, the 1064nm fundamental frequency generated by the neodymium-doped yttrium aluminum garnet laser is tripled to obtain a 355nm pulsed laser, the laser beam is incident on the above-mentioned target after being focused by the lens, the target and the substrate The distance is 30mm, high vacuum (1.0×10 -6 (Mg 0.2 co 0.2 Ni 0.2 Cu 0.2 Zn 0.2 )O thin film, in which the substrate is made of high-purity platinum, and the substrate temperature is 700°C.
[0029] The deposition time of the film is determined by the film thickness requirements, generally 1 to 2 hou...
Embodiment 2
[0033] Adopt laser molecular beam epitaxy deposition technology to prepare high-entropy oxide (Mg 0.25 co 0.15 Ni 0.2 Cu 0.2 Zn 0.2 )O thin film: According to the molar ratio (0.25 / 0.15 / 0.2 / 0.2 / 0.2), magnesium oxide, cobalt oxide, nickel oxide, copper oxide and zinc oxide are high-energy ball milled for 10-15 hours, mixed evenly and pressed into tablets to make laser molecules The target used for beam epitaxy deposition, the 1064nm fundamental frequency generated by the neodymium-doped yttrium aluminum garnet laser is tripled to obtain a 355nm pulsed laser, the laser beam is incident on the above-mentioned target after being focused by the lens, the distance between the target and the substrate 20mm, in high vacuum 1.0×10 -6 Deposited on the substrate under Pa (Mg 0.25 co 0.15 Ni 0.2 Cu 0.2 Zn 0.2 )O thin film, wherein the substrate is made of stainless steel, and the temperature of the substrate is 600°C.
[0034] The deposition time of the film is determined by the...
Embodiment 3
[0038] Adopt laser molecular beam epitaxy deposition technology to prepare high-entropy oxide (Mg 0.2 co 0.2 Ni 0.3 Cu 0.15 Zn 0.15 )O thin film: According to the molar ratio (0.2 / 0.2 / 0.3 / 0.15 / 0.15), magnesium oxide, cobalt oxide, nickel oxide, copper oxide and zinc oxide are milled for 10-15 hours by high-energy ball milling, and the laser molecules are made into tablets after mixing evenly The target used for beam epitaxy deposition, the 1064nm fundamental frequency generated by the neodymium-doped yttrium aluminum garnet laser is tripled to obtain a 355nm pulsed laser, the laser beam is incident on the above target after being focused by the lens, the target and the substrate The distance is 40mm, the high vacuum degree is 1.0×10 -6 Deposited on the substrate under Pa (Mg 0.2 co 0.2 Ni 0.3 Cu 0.15 Zn 0.15 ) O thin film, wherein the substrate is a gold-plated single crystal silicon wafer, and the substrate temperature is 500 °C.
[0039] The deposition time of the ...
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