LED packaging method

Abstract

The invention relates to an LED packaging method. The method comprises the following steps of selecting a heat dissipation substrate, welding an RGB three-primary-color LED chip on the heat dissipation substrate, growing a lower silica gel layer on the RGB three-primary-color LED chip, growing a semi-spherical silica gel lens on the lower silica gel layer, and growing an upper silica gel layer onthe lower silica gel layer and the semi-spherical silica gel lens so as to complete the encapsulation of an LED. According to the LED packaging structure of the invention, due to the fact that an aluminum heat dissipation substrate with an inclined through hole structure is adopted, the heat dissipation substrate effect of the LED is improved. By adopting the semi-spherical silica gel lens structure, the light of the LED chip can be better irradiated out through the packaging material. Therefore, the transmission rate of the light is improved.

Description

technical field [0001] The invention relates to the technical field of LED packaging, in particular to an LED packaging method. Background technique [0002] At the end of the last century, the breakthrough of III-V compound semiconductors represented by GaN-based materials in the field of blue light wick chips brought about a revolution in lighting, marked by high-power light-emitting diodes (Light-EmittingDiode, LED) Semiconductor lighting technology (Solid State Lighting, SSL) as the light source. [0003] The so-called led lamp is a kind of lamp that uses light-emitting diode as the main material. In the case of a certain forward bias voltage and current, the electrons injected into the P region and the N region undergo radiative recombination during diffusion to emit a light source. Compared with traditional light bulbs, LED lights have the advantages of high luminous purity, low power consumption, and long life. In recent years, LEDs mostly use a GaN-based blue wick...

AI Technical Summary

Problems solved by technology

[0004] First, because high-power LEDs are used in lighting and other occasions, cost control is very important, and the structural size of the external heat sink of high-power LED lamps is not allowed to be too large, and it is impossible to allow active cooling of substrates and LED chips by adding electric fans. The safe working junction temperature should be within 110°C. If the junction temperature is too high, it will lead to a series of problems such as reduced light intensity, spectral shift, increased color temperature, increased thermal stress, and accelerated chip aging, which greatly reduces the use of LEDs. At the same time, it can also lead to accelerated aging of the encapsulation gel filled on the chip, affecting its light transmission efficiency

At present, most of the chips are packaged on thin metal heat dissipation substrates. Because metal heat dissipation substrates are thin, have small heat capacity, and are easy to deform, the contact between them and the bottom surface of the heat dissipation substrate is not close enough to affect the effect of heat dissipation substrates.

Second, the light emitted by the LED light source is generally distributed in a divergent manner, that is, the Lambertian distribution, resulting in insufficient illumination brightness of the light source. Generally, secondary shaping is required through an external lens to meet the lighting needs of specific occasions, thus increasing production costs.

Since the chip absorbs backscattered light, this direct coating method will reduce the light extraction efficiency of the package. In addition, the high temperature generated by the chip will significantly reduce the quantum efficiency of the phosphor, which will seriously affect the Package Lumen Efficiency

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