High-quality aluminum nitride monocrystal growth method

A growth method, aluminum nitride technology, applied in the direction of single crystal growth, single crystal growth, crystal growth, etc., can solve the problem of reducing crystal quality and achieve the effect of reducing growth stress

Active Publication Date: 2018-04-24
BEIJING HUAJINCHUANGWEI ELECTRONICS CO LTD
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

Such defects further degrade the crystal quality in AlN crystal growth, resulting in a large number of defects and even polycrystalline

Method used

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  • High-quality aluminum nitride monocrystal growth method

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Embodiment Construction

[0022] The present invention will now be described more fully with reference to the accompanying drawings, in which exemplary embodiments of the invention are shown. This invention may, however, be embodied in many different forms and should not be construed as limited to the exemplary embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art.

[0023] like figure 1 As shown, the present invention provides a kind of growth method of high-quality aluminum nitride single crystal, and this method comprises the steps:

[0024] 1) Put the material source into the tantalum carbide crucible 9, the first layer of the filler layer from bottom to top is an aluminum nitride powder layer 8 with a purity of 99.9%; the second layer is an aluminum nitride powder layer with a purity of 99.9% After sintering, the particle layer 7; the third layer is a...

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Abstract

The invention discloses a high-quality aluminum nitride monocrystal growth method. The method comprises the steps that an initial deposition layer adopts a large aluminum nitride/silicon carbide mixedfilling mode, then, high-purity aluminum nitride powder is adopted, temperature and pressure are changed in the growth process, and aluminum nitride filling layers in a crucible include the first aluminum nitride powder layer, the second aluminum nitride sintered granular layer, the third aluminum nitride and silicon carbide granular mixture layer and the fourth aluminum nitride and silicon carbide granular mixture source layer from bottom to top. The silicon carbide powder is mixed into the aluminum nitride powder, and different silicon carbides are adopted in different interlayers, due to the ratio of aluminum nitride, the growth strain between a silicon carbide substrate and the aluminum nitride monocrystal is relieved, the temperature and pressure changing technology is adopted in thegrowth process, the temperature increase and decrease speed is controlled, material source bodies are arranged from top to bottom, the content of silicon carbide is gradually lowered, the concentration of the silicon carbide in the material sources is adjusted so as to adjust the content of silicon carbide in the aluminum nitride monocrystal, and therefore the growth strain of the aluminum nitride monocrystal is lowered.

Description

technical field [0001] The invention relates to the field of growing aluminum nitride single crystals by a physical meteorological transmission method, in particular to a growth method for high-quality aluminum nitride single crystals. Background technique [0002] Aluminum nitride has a large band gap, up to 6.2eV, and high thermal conductivity. It is excellent as a light-emitting element in the ultraviolet region and a substrate material for electronic devices. Now the more common method of producing aluminum nitride single crystal is physical meteorological transport (PVT) method. Previously, the self-nucleation growth method was used to obtain aluminum nitride single crystals. However, due to the narrow growth window and high growth temperature of aluminum nitride single crystals, the current silicon carbide single crystal substrate can effectively control the crystal growth direction. However, the use of this heterogeneous substrate results in large thermal and lattice...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/40C30B23/00
CPCC30B23/00C30B29/403
Inventor 杨丽雯程章勇刘欣宇杨雷雷
Owner BEIJING HUAJINCHUANGWEI ELECTRONICS CO LTD
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