Manufacturing method of light-emitting diode epitaxial wafer and light-emitting diode epitaxial wafer

Abstract

The invention discloses a manufacturing method of a light-emitting diode epitaxial wafer and the light-emitting diode epitaxial wafer, and belongs to the field of light-emitting diodes. The method comprises the steps as follows: a substrate is provided; and a low-temperature buffer layer, a high-temperature buffer layer, an N-type layer, an active layer, an electron blocking layer and a P-type layer sequentially grow on the substrate. The manufacturing method is characterized in that the P-type layer grows as follows: a first GaN sub-layer with a first thickness and a first Mg doping concentration grows on the electron blocking layer at a first growth temperature, a first growth pressure and a first growth rate; a second GaN sub-layer with a second thickness and a second Mg doping concentration grows on the first GaN sub-layer at a second growth temperature, a second growth pressure and a second growth rate; and a third GaN sub-layer with a third thickness and a third Mg doping concentration grows on the second GaN sub-layer at a third growth temperature, a third growth pressure and a third growth rate.

Description

technical field [0001] The invention relates to the field of light emitting diodes (English Light Emitting Diode, referred to as LED), in particular to a method for manufacturing a light emitting diode epitaxial wafer and a light emitting diode epitaxial wafer. Background technique [0002] LED is a semiconductor electronic component that can emit light. As an efficient, environmentally friendly, and green new solid-state lighting source, LEDs are being rapidly and widely used in various fields, such as traffic lights, automotive interior and exterior lights, urban landscape lighting, and mobile phone backlights. [0003] The existing LED epitaxial wafer growth method includes: sequentially growing a low-temperature buffer layer, a high-temperature buffer layer, an N-type layer, an active layer, an electron blocking layer and a P-type layer on a substrate. Wherein, the P-type layer is a GaN layer grown by a single growth temperature, a single growth pressure and a single Mg...

AI Technical Summary

Problems solved by technology

[0005] The P-type layer is a Mg-doped GaN layer. Since Mg activation efficiency is very low, high Mg doping is required to achieve higher Mg activation efficiency, and excessive Mg doping will inevitably bring other side effects, such as affecting multiple quantum wells. The crystal quality and the self-compensation effect of the P-type layer lead to a decrease in the hole injection efficiency and affect the recombination luminescence efficiency

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