A high-efficiency preparation of high-purity semi-insulating silicon carbide single crystal growth device and method

Abstract

The invention discloses a growth device and a growth method for preparing high-purity semi-insulating carbonized silicon single crystals efficiently. The growth method is implemented by the carbonizedsilicon single crystal growth device with a structure of an inert gas graphite flow guide tube and a graphite current-limiting cover. Inertia gases generate forced convection under the action of thestructure, and a forced convection layer is formed on the outer wall of a graphite crucible. When speed and flow of the gas convection are high, influences of diffusion on concentration distribution can be inhibited. In the method, directional movement of the forced convection layer can prevent nitrogen molecules outside the graphite crucible from dispersing into the graphite crucible, so that theproblem that adsorption nitrogen serves as a pollution source in a heat insulating system is solved. According to the method, an inertia-gas atmosphere isolation room system is not needed, and a long-term nitrogen removal process based on furnace vacuumizing is also not needed. The growth device and the growth method have the advantages of high efficiency and equipment simplicity, and can be widely applied to multiple carbonized silicon single crystal furnace systems in the field.

Description

technical field [0001] The invention relates to single crystal growth technology, in particular to a device and method for high-efficiency preparation of high-purity semi-insulating silicon carbide single crystal growth. Background technique [0002] Silicon carbide is a typical wide-bandgap semiconductor material and the third-generation semiconductor material after silicon and gallium arsenide. Compared with silicon and gallium arsenide, silicon carbide materials have excellent properties such as high thermal conductivity, high breakdown field strength, and high saturation electron drift rate, and have great application prospects in high temperature, high frequency, high power, and radiation-resistant devices . Transistors made of semi-insulating silicon carbide can generate power five times the power density of GaAs microwave devices at frequencies up to 10 GHz. Therefore, semi-insulating silicon carbide single crystal is currently the best substrate material for the pr...

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Problems solved by technology

Although the effect of this device is very obvious when it is used, it also has many disadvantages of increasing equipment cost, increasing equipment complexity, increasing the number of processes and operating complexity

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