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IZO sintered compact sputtering target and method for producing same

A manufacturing method and a technology for sputtering targets, which are applied in the directions of sputtering plating, ion implantation plating, coating, etc., can solve the problems of inability to obtain density, increase, etc. The effect of productivity

Active Publication Date: 2018-01-19
JX NIPPON MINING & METALS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, in Patent Document 4, calcination is actually carried out at 1000°C, and a sufficient increase in density cannot be obtained at this temperature.

Method used

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  • IZO sintered compact sputtering target and method for producing same
  • IZO sintered compact sputtering target and method for producing same
  • IZO sintered compact sputtering target and method for producing same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0064] Indium oxide powder and zinc oxide powder were mixed at a predetermined ratio, and the mixed powder was calcined at 1300° C. for 10 hours in an air atmosphere. In addition, during the calcination process, it is kept at 1100°C, 1200°C, and 1260°C for a certain period of time. The oxide structure of the calcined powder is In 2 o 3 and Zn k In 2 o k+3 (k=3) Composite oxide. The calcined powder is finely pulverized using a jet mill pulverizer and a wet media agitation mill, and then granulated to obtain a specific surface area of ​​2.22m 2 / g, particles with an average particle size of 1.71 μm. This is then molded to produce a molded body composed of IZO.

[0065] Next, this molded body was held in an oxygen atmosphere at a sintering temperature of 1430° C. for 14 hours to manufacture an indium oxide-zinc oxide-based oxide (IZO) sintered body. The atomic ratio Zn / (In+Zn) of the sintered body to In is 0.17, and the oxide structure of the sintered body is In 2 o 3 a...

Embodiment 2-16

[0070] In Examples 2-16, as shown in Table 1, the calcination conditions (calcination temperature, calcination time, intermediate retention temperature during calcination, intermediate retention time during calcination), pulverization conditions of calcined powder, sintering conditions (sintering temperature, sintering time), the composition ratio of the sintered body (mixing ratio of raw materials, etc.) conditions. As a result, as shown in Table 1, an ideal IZO sintered body sputtering target with high relative density and low brightness could be produced. Sputtering was performed using this sputtering target. As a result, even after long-term sputtering, the generation of nodules on the target surface can be suppressed, and the generation of arc discharge can be suppressed. Produce powder and other effects on the surface. Furthermore, stable thin film characteristics (uniformity of film) are obtained.

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Abstract

Provided is an indium oxide-zinc oxide-based oxide (IZO) sintered compact target that is characterized in that an oxide that constitutes the target is a composite oxide of In2O3 and ZnkIn2Ok+3 (k=3, 4or 5) and that the relative density of the target is 98.4% or more. The present invention addresses the problem of increasing the density of an IZO sintered compact and reducing the number of fine holes (micropores) remaining between crystal grains so as to improve the quality of a formed film.

Description

technical field [0001] The invention relates to an indium oxide-zinc oxide oxide sintered body (IZO) sputtering target and a manufacturing method thereof. Background technique [0002] Thin films of indium oxide-tin oxide-based oxides (referred to as "ITO"), indium oxide-zinc oxide-based oxides (referred to as "IZO") and other oxides with indium oxide as the main component have high electrical conductivity and are sensitive to visible light. Therefore, it is widely used as the pixel electrode of various flat panel display devices such as liquid crystal display devices. [0003] In particular, IZO has characteristics such as good etching properties and high flatness of the film surface because a stable amorphous film can be obtained. As a method for forming a transparent conductive thin film, a sputtering method using a sputtering target produced from a sintered body of these oxides is widely practiced. [0004] Among the properties required as a sputtering target, there ar...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/34C04B35/01
CPCC04B35/01C23C14/34
Inventor 挂野崇山口洋平远藤瑶辅
Owner JX NIPPON MINING & METALS CO LTD
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