Ka-Band MMIC (monolithic microwave integrated circuit) low-noise amplifier

A low-noise amplifier and amplifier technology, applied in the field of electronics, can solve the problems of high noise figure, poor linearity, insufficient in-band gain flatness, etc., to reduce noise figure, improve gain flatness and suppress out-of-band spurious Effect

Pending Publication Date: 2018-01-19
GUILIN UNIV OF ELECTRONIC TECH +1
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  • Abstract
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Problems solved by technology

[0004] The technical problem to be solved by the present invention is the technical problem of high noise figure, insufficient flatness of gain in band and poor linearity existing in the prior art, and a new Ka-band MMIC low-noise amplifier is provided, which has a noise figure Technical characteristics of low, in-band gain flatness and good linearity

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  • Ka-Band MMIC (monolithic microwave integrated circuit) low-noise amplifier

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Embodiment Construction

[0037] In order to make the object, technical solution and advantages of the present invention more clear, the present invention will be further described in detail below in conjunction with the examples. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0038] This embodiment provides a Ka-band MMIC low noise amplifier, such as figure 1 , including a two-stage amplifier, a three-stage matching network microstrip line structure and a λ / 4 transmission line structure;

[0039] The two-stage amplifier consists of a first stage FET amplifier 1:

[0040] The first-stage gate bias network 2, the first-stage drain bias network 3, the resistor 4 of the first-stage source, and the parallel network of the capacitor 5 of the first-stage source; the first-stage field effect transistor amplifier 1 The die size of the pseudo-modulated doped heterojunction field-effect transistor (pHEMT...

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Abstract

The invention relates to a Ka-band MMIC (monolithic microwave integrated circuit) low-noise amplifier and mainly solves the technical problem that the prior art has high noise coefficient, poor in-band gain flatness and poor linearity. The Ka-band MMIC low-noise amplifier comprises a two-stage amplifier, a gamma / 4 transmission wire structure and a three-stage matching network, the two-stage amplifier comprises a primary field-effect transistor amplifier, a primary gate bias network, a primary drain bias network, a primary source resistor ad primary source capacitor parallel network, a secondary amplifier, a secondary gate bias network, a secondary drain bias network, and a secondary source resistor and capacitor parallel network, the gamma / 4 transmission wire structure comprises a first transmission wire mesh connected with the primary gate bias network and a second transmission wire mesh connected with the primary drain bias network; by using the above technical scheme, the problem iswell solved; the Ka-band MMIC low-noise amplifier is applicable to the field of Ka-band communications.

Description

technical field [0001] The invention relates to the field of electronic technology, in particular to a Ka-band MMIC low-noise amplifier used in a Ka-band microwave wireless communication system. Background technique [0002] With the development of microwave communication technology, monolithic microwave integrated circuit (Monolithic Microwave Integrated Circuit, MMIC) has become an ideal communication system for electronic countermeasures due to its advantages of small size, compactness, good stability, strong anti-interference ability and good product performance consistency. s Choice. [0003] The Ka-band MMIC low-noise amplifier is designed at the front end of the microwave radio frequency receiving system, and its main function is to amplify the low-voltage signal from the antenna to a small signal. The noise figure of the front-end amplifier has a great influence on the noise of the entire microwave system. The gain of the noise figure of the front-end amplifier will...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03F1/26H03F3/195
Inventor 李海鸥谢仕锋邹锋首照宇高喜李琦蒋振荣张法碧陈永和肖功利李陈成
Owner GUILIN UNIV OF ELECTRONIC TECH
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