Method for increasing minority carrier lifetime of top of silicon ingot by gettering

A minority carrier lifetime and silicon ingot technology, applied in chemical instruments and methods, diffusion/doping, polycrystalline material growth, etc., can solve the problems of lack of new and efficient methods, and achieve the effect of improving minority carrier lifetime

Inactive Publication Date: 2018-01-16
宁夏申和新材料科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Lack of new and efficient methods to increase the minority carrier lifetime of silicon ingots

Method used

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  • Method for increasing minority carrier lifetime of top of silicon ingot by gettering
  • Method for increasing minority carrier lifetime of top of silicon ingot by gettering
  • Method for increasing minority carrier lifetime of top of silicon ingot by gettering

Examples

Experimental program
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Effect test

Embodiment 1

[0028] A method for increasing the minority carrier lifetime at the top of a silicon ingot by gettering, using the polycrystalline semi-melting process to cast the ingot, includes the following steps:

[0029] S1: Preparation of the polycrystalline furnace: Install the quartz rod on the upper part of the polycrystalline furnace, stretch the quartz rod to the bottom and mark it as zero, then raise the quartz rod, and install phosphorus weighing 20.34g in the argon gas pipeline Silicon master alloy. The phosphorus-silicon master alloy is obtained by diluting 100% phosphorus powder with 100% silicon by crystal pulling, and the size of the phosphorus-silicon master alloy is 1-15 mm. The resistivity of the phosphorus-silicon master alloy is greater than 0.0011Ω·cm. It is to convert the set target resistivity value into the gettering crystal concentration value according to the graphical method, table method or calculation method, so as to determine the input amount of the getterin...

Embodiment 2

[0038] A method for increasing the minority carrier lifetime at the top of a silicon ingot by gettering, using the polycrystalline semi-melting process to cast the ingot, includes the following steps:

[0039] S1: Preparation of the polycrystalline furnace: Install the quartz rod on the upper part of the polycrystalline furnace, stretch the quartz rod to the bottom and mark it as zero, then lift the quartz rod, and install phosphorus weighing 50.12g in the argon gas pipeline Silicon master alloy. The phosphorus-silicon master alloy is obtained by diluting 100% phosphorus powder with 100% silicon by crystal pulling, and the size of the phosphorus-silicon master alloy is 1-15 mm. The resistivity of the phosphorus-silicon master alloy is greater than 0.0011Ω·cm. It is to convert the set target resistivity value into the gettering crystal concentration value according to the graphical method, table method or calculation method, so as to determine the input amount of the gettering...

Embodiment 3

[0048] A method for increasing the minority carrier lifetime at the top of a silicon ingot by gettering, using the polycrystalline semi-melting process to cast the ingot, includes the following steps:

[0049] S1: Preparation of the polycrystalline furnace: Install the quartz rod on the upper part of the polycrystalline furnace, stretch the quartz rod to the bottom and mark it as zero, then raise the quartz rod, and install phosphorus with a weight of 12.04g in the argon gas pipeline Silicon master alloy. The phosphorus-silicon master alloy is obtained by diluting 100% phosphorus powder with 100% silicon by crystal pulling, and the size of the phosphorus-silicon master alloy is 1-15 mm. The resistivity of the phosphorus-silicon master alloy is greater than 0.0011Ω·cm. It is to convert the set target resistivity value into the gettering crystal concentration value according to the graphical method, table method or calculation method, so as to determine the input amount of the ...

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Abstract

The invention discloses a method for increasing the minority carrier lifetime of the top of a silicon ingot by gettering. The ingot is cast by utilizing a polycrystal semi-fusion technology, and argonis used as a protection gas in the whole ingot casting process. At the growth last period of the ingot crystal growth, namely when the height of a residual silicon liquid is 5-10 mm, gettering crystals are added into the residual silicon liquid, the gettering crystals are completely melted and are uniformly mixed with the silicon liquid, and then the ingot grows again. The minority carrier lifetime of the top of the silicon ingot is improved by 0.5-1.0 microsecond through the use of a gettering principle of high-concentration phosphorus doping diffusion, and in particular, the solid concentration is increased in a region of heavy phosphorus diffusion due to the influence of Fermi level. Meanwhile extremely serious dislocation is formed by heavy phosphorus doping in the region, and gathering and gettering are performed on metal impurities at the top of the ingot at the dislocation grain boundary. At the same time, rapid growth is completed, low-temperature annealing is carried out, andsolid-phase reverse diffusion in the annealing process is reduced, and finally the minority carrier lifetime of the silicon ingot is improved, so that the targeted high-lifetime silicon ingot is obtained.

Description

technical field [0001] The invention relates to a polycrystalline ingot semi-melting process, in particular to a method for increasing the minority carrier lifetime at the top of a silicon ingot by getting gettered. Background technique [0002] The preparation methods of high-efficiency polysilicon are divided into seeded high-efficiency polysilicon technology and seedless high-efficiency polysilicon technology, which are commonly known as semi-melting high-efficiency and full-melting high-efficiency. In principle, the polycrystalline ingot semi-melting process has two main factors affecting the minority carrier life of the polycrystalline silicon ingot top. One is the lattice defects formed during the silicon ingot casting process, such as dislocations, grain boundaries, and crystal orientations; the other is the silicon ingot itself. Due to the metal impurities brought in by the raw materials and the metal impurities diffused from the ingot of the quartz ceramic crucible,...

Claims

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Application Information

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IPC IPC(8): C30B28/06C30B29/06C30B31/02
Inventor 王飞顾燕滨刘洁
Owner 宁夏申和新材料科技有限公司
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