Light emitting diode and manufacturing method thereof
A technology of light-emitting diodes and manufacturing methods, applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of sacrificing the area of the active area, increasing the cost of chip manufacturing, and current congestion, so as to improve the ohmic contact capability and increase the current The effect of blocking ability and uniform distribution of current
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[0054] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.
[0055] An embodiment of the present invention provides a light emitting diode, the structure of which is shown in figure 1 As shown, the light-emitting diode includes the following structure:
[0056] A substrate 1, and a buffer layer 2, an unintentionally doped layer 3, a first doped layer 4, a first heavily doped layer 5, a first ohmic contact layer 6, a first Highly doped layer 7, first isolation layer 8, second doped layer 9, first current blocking layer ...
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