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Perovskite light emitting diode and preparation method thereof

A technology of perovskite type and perovskite structure, which is applied in semiconductor/solid-state device manufacturing, electrical components, electric solid-state devices, etc., can solve the problems of energy waste and consumption, and achieve the goal of improving device performance and hole injection Effect

Active Publication Date: 2017-12-22
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In order to solve the problem of energy waste and consumption caused by the high turn-on voltage of the existing perovskite diodes, the present invention provides a perovskite light-emitting diode and a preparation method thereof, which can realize high-brightness and high-efficiency light emission and reduce turn-on voltage, thereby reducing energy waste and consumption

Method used

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  • Perovskite light emitting diode and preparation method thereof
  • Perovskite light emitting diode and preparation method thereof
  • Perovskite light emitting diode and preparation method thereof

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preparation example Construction

[0051] The present invention also provides a method for preparing a perovskite-type electroluminescent device, comprising the following steps:

[0052] (1) Carry out ultrasonic cleaning to substrate layer with ethanol solution, acetone solution and deionized water successively, dry after cleaning;

[0053] (2) transfer the substrate layer to the vacuum chamber to prepare an anode layer;

[0054] (3) Pretreating the substrate of the prepared electrode layer with UV;

[0055] (4) The substrate layer treated in step (3) is sequentially prepared according to the device structure to prepare a functional layer film, and sequentially prepare a hole transport layer, a modification layer, a light-emitting layer and an electron transport layer;

[0056] (5) After the preparation of the functional layer film is completed, the preparation of the cathode layer is carried out in the vacuum evaporation chamber;

[0057] (6) Packaging the device treated in step (5) in a glove box, the glove...

Embodiment 1

[0060] The device structure is:

[0061] ITO / PEDOT:PSS(40nm) / guanine(1nm) / CH 3 NH 3 PbBr 3 (50nm) / TPBi(40nm) / Ag(100nm)

[0062] The preparation method is as follows:

[0063] (1) Use ethanol solution, acetone solution and deionized water to ultrasonically clean the transparent conductive substrate ITO glass, and dry it with dry nitrogen after cleaning. The ITO film on the glass substrate is used as the anode layer of the device, and the sheet resistance of the ITO film is 15Ω / □.

[0064] (2) The dried substrate was moved into a vacuum chamber, and the ITO glass was pretreated with ultraviolet and ozone for 10 minutes under an oxygen pressure environment.

[0065] (3) Spin-coat PEDOT:PSS on the processed substrate, and perform annealing treatment, then move the substrate into a vacuum chamber, evaporate an ultra-thin layer of guanine, control the evaporation rate to 0.01nm / s, and the evaporation rate and The thickness is monitored by a film thickness gauge.

[0066] (4) ...

Embodiment 2

[0072] The device structure is:

[0073] ITO / PEDOT:PSS(40nm) / guanine(2nm) / CH 3 NH 3 PbBr 3 (50nm) / TPBi(40nm) / Ag(100nm)

[0074] The preparation method is as follows:

[0075] (1) Use ethanol solution, acetone solution and deionized water to ultrasonically clean the transparent conductive substrate ITO glass, and dry it with dry nitrogen after cleaning. The ITO film on the glass substrate is used as the anode layer of the device, and the sheet resistance of the ITO film is 15Ω / □.

[0076] (2) The dried substrate was moved into a vacuum chamber, and the ITO glass was pretreated with ultraviolet and ozone for 10 minutes under an oxygen pressure environment.

[0077] (3) Spin-coat PEDOT:PSS on the processed substrate, and perform annealing treatment, then move the substrate into a vacuum chamber, evaporate an ultra-thin layer of guanine, control the evaporation rate to 0.01nm / s, and the evaporation rate and The thickness is monitored by a film thickness gauge.

[0078] (4) ...

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Abstract

The invention belongs to the electroluminescent device technical field, discloses a Perovskite light emitting diode and a preparation method thereof, and aims to solve the energy waste and consumption problems caused by a high light-up voltage of an existing perovskite diode; the Perovskite electroluminescent device structure comprises the following units arranged in sequence from bottom to top: a substrate layer, an anode layer, a cavity transmission layer, a modification layer, a luminescent layer, an electron transmission layer and an cathode layer; the luminescent layer comprises a luminescent material with the perovskite structure; the perovskite structure refers to an organic / inorganic hybrid ABX3 type cubic crystal system structure, wherein A refers to an organic amine group, B refers to the fourth main group metal, and X refers to a unary halogen or a multi-halogen combination.

Description

technical field [0001] The invention belongs to the technical field of electroluminescence devices, and in particular relates to a perovskite light-emitting diode and a preparation method thereof. Background technique [0002] Metal halide perovskite materials can be obtained with the chemical formula MAPbBr 3 To represent, where X is Br, I, and Cl, this type of material has excellent photoelectric properties, and can be widely used in photoelectric devices such as solar cells, photodetectors, and light-emitting diodes. Perovskite-based light-emitting diodes have the characteristics of high luminous purity, high emission efficiency and low excitation energy, so they may become new light-emitting materials that replace inorganic quantum dots and traditional organic light-emitting materials. [0003] For example, the invention patent with application number 201610635175.9 discloses a double-layer perovskite light-emitting diode and its preparation method; for example, the inv...

Claims

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Application Information

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IPC IPC(8): H01L51/50H01L51/56H01L51/54
CPCH10K85/00H10K30/865H10K50/00H10K71/00
Inventor 于军胜王子君高瞻吴梦鸽
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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