Surface cleaning method of silicon dioxide chip in a kind of diode manufacture

Abstract

A method of cleaning the surface of a silicon dioxide chip in diode manufacturing includes the following steps: (1) alkali corrosion: corroding a silicon dioxide chip with alkali; (2) flushing: flushing the silicon dioxide chip after treatment in step (1) for 7-9 minutes; and (3) alkali neutralization: making the silicon dioxide chip after treatment in step (2) react with weak acid to achieve the purpose of alkali neutralization. Through the steps and a high-temperature alkali corrosion process, the temperature can be easily controlled within the range of + / -5 DEG C, and the instability of the manufacture procedure caused by external environment factors is avoided. Through secondary alkali corrosion, the surface of the silicon chip becomes rough and uniform. Then, alkali ions are neutralized with phosphoric acid, which is conducive to surface cleaning. The spray device sprays pure water and is disposable, and thus, pollution is reduced.

Description

Technical field: [0001] The invention relates to a method for cleaning the surface of a silicon dioxide chip in diode manufacturing. Background technique: [0002] When manufacturing diodes, one of the steps needs to clean the surface of the silicon dioxide chip to make the surface of the silicon dioxide chip easy to glue. The current cleaning method is: mixed acid washing → flushing → bisphosphoric acid flushing → flushing → Ammonia water passivation→flushing→ultrasonic cleaning→dehydration→drying. Chips cleaned in this way are greatly affected by the temperature and humidity of the indoor environment, and the product quality fluctuates greatly, resulting in unstable product quality. In addition, since the surface of the chip corroded by acid is as smooth as a mirror, in the subsequent glue application, the adhesion with the glue is poor. During the electroplating process of the product, water is easy to infiltrate from the gap between the glue and the chip, resulting in a ...

AI Technical Summary

Problems solved by technology

[0002] When manufacturing diodes, one of the steps needs to clean the surface of the silicon dioxide chip to make the surface of the silicon dioxide chip easy to glue. The current cleaning method is: mixed acid washing → flushing → bisphosphoric acid flushing → flushing → Ammonia water passivation→flushing→ultrasonic cleaning→dehydration→drying. Chips cleaned in this way are greatly affected by the indoor ambient temperature and humidity, and the product quality fluctuates greatly, resulting in unstable product quality.

In addition, since the surface of the chip corroded by acid is as smooth as a mirror, in the subsequent glue application, the adhesion with the glue is poor. During the electroplating process of the product, water is easy to infiltrate from the gap between the glue and the chip, resulting in a decline in electrical performance; at the same time, Due to the poor moisture resistance of the product during storage, the electrical properties of the product are attenuated; the reverse characteristics of the product are poor, the electrical yield is low, and the reliability is low