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Transistor acoustic sensing element, preparation method thereof, acoustic sensor and portable device

An acoustic sensor and acoustic sensing technology, applied in the sensor field, can solve problems such as difficulty in meeting sensitivity, flexibility and small size requirements, and achieve the effects of expanding the sound sensing range, improving sensing performance, and improving sensitivity

Active Publication Date: 2017-12-15
BOE TECH GRP CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the basic structure, process and performance of traditional acoustic sensors are difficult to meet the sensitivity, flexibility and small size requirements of people in the field of artificial intelligence or wearable electronics.

Method used

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  • Transistor acoustic sensing element, preparation method thereof, acoustic sensor and portable device
  • Transistor acoustic sensing element, preparation method thereof, acoustic sensor and portable device
  • Transistor acoustic sensing element, preparation method thereof, acoustic sensor and portable device

Examples

Experimental program
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Effect test

Embodiment 1

[0040] This embodiment provides a transistor acoustic sensing element, such as figure 1 and figure 2 As shown, it includes a gate 2, a gate insulating layer 3, a first pole 4, an active layer 5 and a second pole 6 arranged on a substrate 1. The active layer 5 is a three-dimensional mesh structure of nanometer thin wires, and the active layer 5. Vibration can be generated under the action of the sound signal, so that the output current of the transistor sound sensing element changes accordingly.

[0041] Wherein, the active layer 5 is disposed between the first pole 4 and the second pole 6, and the transistor acoustic sensing element is a transistor with a vertical structure. The first pole 4 and the second pole 6 are respectively the source and the drain of the transistor. The transistor with this vertical structure is a charge injection controlled device, that is, when a negative bias is applied on the source and gate 2, holes can accumulate at the interface between the so...

Embodiment 2

[0057] This embodiment provides an acoustic sensor, including a plurality of transistor acoustic sensing elements in Embodiment 1, and the plurality of transistor acoustic sensing elements are arranged in an array.

[0058] The acoustic sensor formed by a plurality of transistor acoustic sensing elements arranged in an array has a wider sensing range for sound and a higher sensing sensitivity for sound.

[0059] Preferably, the acoustic sensor also includes a signal acquisition and analysis unit, the signal acquisition and analysis unit is connected to each transistor acoustic sensing element, and is used to collect the output signals of each transistor acoustic sensing element and conduct comprehensive analysis to obtain the source of the sound signal. direction distribution information and intensity distribution information. Wherein, the direction distribution information of the sound signal refers to the direction from which the sound signal is denser and the direction from...

Embodiment 3

[0062] This embodiment provides a portable device, including the acoustic sensor in Embodiment 2.

[0063] By adopting the acoustic sensor in the second embodiment, the sound sensing sensitivity of the portable device is improved, and the sound sensing range thereof is expanded.

[0064] The portable device provided by the present invention is any intelligent electronic device that can be carried around.

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Abstract

The present invention provides a transistor acoustic sensing element, a preparation method thereof, an acoustic sensor and a portable device. The transistor acoustic sensing element comprises a gate, a gate insulation layer, a first pole, an active layer and a second pole which are all arranged on a substrate; the active layer is of a nanometer fine wire three-dimensional mesh structure; and the active layer generates vibration under the action of sound signals, so that the output current of the transistor acoustic sensing element changes correspondingly. According to the transistor acoustic sensing element, the active layer of the nanometer fine wire three-dimensional mesh structure is adopted, so that the detection of the sound signals can be realized; since the active layer of such kind structure can sense the weak vibration of acoustic waves sensitively, the active layer of such kind structure can improve the sensitivity of the transistor acoustic sensing element to the sound signals, and therefore, the sensing performance of the transistor acoustic sensing element to sound can be improved.

Description

technical field [0001] The invention relates to the technical field of sensors, in particular to a transistor acoustic sensing element, a preparation method thereof, an acoustic sensor and a portable device. Background technique [0002] In recent years, with the rapid development of artificial intelligence, wearable electronics, and the Internet of Things, sensors have received more and more attention. People's performance requirements for sensors have also changed from traditional detection of source signals to high sensitivity of devices. , multi-type, flexible, small size and other directions. [0003] Among them, acoustic sensors are widely used in intelligent bionic robots, wearable and other fields because they can perceive the changes of sound signals. However, the basic structure, process and performance of traditional acoustic sensors are difficult to meet the sensitivity, flexibility and small size requirements of people in the field of artificial intelligence or...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01H11/06H10K99/00
CPCG01H11/06H10K10/82H04R23/006H04R2201/003H04R2201/401H04R2410/00H04R31/00H04R2499/11Y02E10/549H10K19/10H10K71/12H10K71/621H10K71/80H10K85/141H10K85/113H10K85/20H10K85/151H10K85/40H10K10/484H10K77/111H10K10/84H04R2307/027H04R31/003H04R7/06H04R1/406H04R3/005H04R19/005H04R19/04H10K10/491H10K71/60H10K2102/00
Inventor 王庆贺胡金良彭锐王东方袁广才
Owner BOE TECH GRP CO LTD
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