Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Cold isostatic pressing molding method and preparation method of ITO rotating target

A cold isostatic pressing forming and rotating target technology, applied in auxiliary forming equipment, ceramic forming machines, manufacturing tools, etc., can solve the problems of easy cracking, poor effect, and low bulk density of the green body, and achieve the filling density. High, good grading effect, high loose density effect

Inactive Publication Date: 2017-12-08
725TH RES INST OF CHINA SHIPBUILDING INDAL CORP
View PDF8 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The usual ITO powder gradation effect is not good, the bulk density is low, generally 1.65 g / cm 3 Below, affected by its performance, the green body formed by cold isostatic pressing still has the problem of easy cracking. Therefore, preventing the cracking of ITO green body in the process of forming, transportation, processing, etc. is the core technical problem that needs to be solved in the forming process.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] A cold isostatic pressing forming method of an ITO rotating target, the steps are as follows:

[0022] The ITO granulation powder (In 2 o 3 :SnO 2 =90:10) into the steel mold (300×300mm) of the hydraulic press, adjust the pressure to 60MPa, and pressurize for 2 minutes. After pressure treatment, crush and pass through a 60-mesh sieve. The obtained ITO powder was put into a tubular polyurethane mold, and subjected to cold isostatic pressing under a pressure of 180 MPa to obtain an ITO tubular green body with a relative density of 69%. Put the biscuit into an oxygen atmosphere sintering furnace, pass in oxygen with a purity of 99.99%, keep the pressure at 0.5MPa, raise the temperature to 1600°C, and keep it warm for 40 hours.

[0023] The sintered target has a relative density of 99.55%. The obtained target is processed to the required size and precision, and bound to the surface of the titanium tube with a purity of 99.99%.

Embodiment 2

[0025] A cold isostatic pressing forming method of an ITO rotating target, the steps are as follows:

[0026] The ITO nanopowder (In 2 o 3 :SnO 2 =95:5) Put it into an aluminum foil bag, seal the bag, put it into an isostatic press, pressurize it for 6 minutes under a pressure of 150MPa, then crush it, and pass it through a 80-mesh sieve. The obtained ITO powder was put into a tubular silica gel mold, and subjected to cold isostatic pressing under a pressure of 250 MPa to obtain an ITO tubular green body with a relative density of 71%. Put the biscuit into an oxygen atmosphere sintering furnace, pass in oxygen with a purity of 99.99%, keep the pressure at 0.6MPa, raise the temperature to 1700°C, and keep it warm for 30 hours.

[0027] The sintered target has a relative density of 99.63%. The obtained target is processed to the required size and precision, and bound to the surface of the titanium tube with a purity of 99.99%.

Embodiment 3

[0029] A cold isostatic pressing forming method of an ITO rotating target, the steps are as follows:

[0030] During the spray granulation process, the finer ITO granulation powder (In 2 o 3 :SnO 2 =97:3), put it into a cylindrical flexible mold, put it into an isostatic press, and pressurize it for 15 minutes under a pressure of 180MPa, then take it out and crush it, and pass it through a 60-mesh sieve. The obtained ITO powder was put into a tubular silica gel mold, and subjected to cold isostatic pressing under a pressure of 250 MPa to obtain an ITO tubular green body with a relative density of 74%. Put the biscuit into an oxygen atmosphere sintering furnace, pass in oxygen with a purity of 99.99%, keep the pressure at 0.7MPa, raise the temperature to 1800°C, and keep it warm for 20 hours.

[0031] The sintered target has a relative density of 99.72%. The obtained target is processed to the required size and precision, and bound to the surface of the titanium tube with a...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Bulk densityaaaaaaaaaa
Login to View More

Abstract

The invention discloses a cold isostatic pressing molding method of an ITO rotating target. The cold isostatic pressing molding method is characterized in that ITO powder is put in a mould, and is subjected to pressure treatment at 50-200MPa for 1-20 minutes to enable internal pores of the ITO powder to be closed, then the ITO powder is taken out of the mould, is crushed and passes a 40-100-mesh screen and thus ITO solid powder with the apparent density being 2.2-2.8g / cm<3> is formed, and then the ITO solid powder is put in a tubular flexible mould and is manufactured into an ITO tubular biscuit through cold isostatic pressing. After the ITO powder is put in the mould and before the ITO powder is subjected to the cold isostatic pressing molding, the ITO powder is subjected to the pressure treatment first for improving the compactness of the ITO powder, then the obtained ITO powder after crushing is solid particles, the grading effect of the particles is good, the apparent density is high and can reach 2.2-2.8g / cm<3>, and the mold filling performance of the ITO powder can be improved effectively. The obtained biscuit after the isostatic pressing is high in density, the relative density can reach above 72%, the intensity is high, and the biscuit is not prone to cracking in the transportation and machining processes.

Description

technical field [0001] The invention relates to a preparation technology of a ceramic rotating target, in particular to a cold isostatic pressing forming and preparation method of an ITO rotating target. Background technique [0002] In the rotary magnetron sputtering device, the inner side of the target is equipped with a fixed magnetic block, which can be sputtered while rotating, so that the target surface is uniformly etched by 360°. Therefore, the use efficiency of the rotating target can reach more than 70%. It is 2 times (20~30%) of the planar target. Moreover, compared with the conventional planar target, the power input per unit area of ​​the rotating target becomes larger, so that a higher film forming speed can be obtained. [0003] In the early days, the preparation methods of ITO rotating targets mainly included plasma spraying method and hot isostatic pressing method. The equipment used in these two methods is expensive, and the density of prepared ITO rotatin...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): B28B3/00B28B17/02B28B11/24
CPCB28B3/003B28B11/243B28B17/026
Inventor 师琳璞刘冠鹏李龙腾郗雨林张伟明
Owner 725TH RES INST OF CHINA SHIPBUILDING INDAL CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com