T-type dual-cantilever beam-type single-pole double-throw switch

Abstract

A T-type dual-cantilever beam-type single-pole double-throw switch is mainly formed by a structure, a microwave transmission line, a driving electrode, an upper electrode, a lower electrode, a mooring anchor and an air bridge. The microwave transmission line and the driving electrode are arranged on the substrate, the upper electrode is a dual-cantilever beam, a middle anchor supports two cantilever beam structures respectively arranged at left and right sides, and the lower electrode employs a single contact, double contacts and three contacts which have elastic beams. At the aspect of mechanical aspects, the impact force for the lower electrode can be reduced caused by rapidly pulling the upper electrode due to the electrostatic force effect to play a buffer effect so as to protect the contacts and the upper electrode so as to enhance the effective contact and avoid ablation and adhesion caused by weak contact. When driving voltage is applied on a first driving electrode, the upper electrode is pulled down under the effect of the electrostatic force and then is contacted with the contacts, the switch is located in a conduction state, the upper electrode at the upper portion of a second driving electrode is warped so as to increase the isolation of the switch, avoid the self actuation between the upper electrode and the lower electrode and enhance the switch life and the microwave performance.

Description

technical field [0001] The invention belongs to the technical field of radio frequency MEMS, and in particular relates to a T-shaped double cantilever beam type single-pole double-throw switch. Background technique [0002] RF MEMS switch is a research hotspot in the field of MEMS since the 1990s. RF MEMS single-pole single-throw switch is a basic device of microwave circuits. Its function is to control the on-off of microwave signals in the transmission system. It is mainly used in microwave signal sources In pulse modulators, attenuators, phase shifters, T / R components. [0003] At present, the institutions that conduct research on RF MEMS switches mainly include the 13th Institute of China Power Group, the 55th Institute of China Power Group, the Institute of Microelectronics of Tsinghua University, Southeast University, the Institute of Electronics of the Chinese Academy of Sciences, and North University of China. For example, the Institute of Microelectronics, Chinese ...

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Problems solved by technology

For example, the Institute of Microelectronics, Chinese Academy of Sciences has designed a new type of electromagnetically driven push-pull RF MEMS switch, which adopts a stress-free monocrystalline silicon torsion beam structure. When the switch coil has no external current, the switches A and B are in the off state, and the coil When a forward current is applied, a pulling force is applied to end A of the beam, and a push force is applied to end B of the beam. The switch A is in the open state and B is in the off state. When the reverse current is applied to the coil, opposite forces are generated at both ends of A and B. At this time , A is in the off state, and B is in the on state. When the RF MEMS switch is working, the entire device needs to be placed in a uniform magnetic field, and the magnetic field lines pass through the Au coil vertically, thus increasing the complexity of the RF MEMS switch. Another example The 55th Institute of China Electronics Co., Ltd. discloses a radio frequency MEMS switch containing a shark-tooth contact system (application number: CN201010584317.6). The shark-tooth contact system includes two sets of high and low contacts, each set of contacts includes Contacts with a consistent height, but it is difficult to achieve the same height during production, so that there will be a virtual connection in the two contacts of the same group, which reduces the life of the switch

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