High-speed and low-power Ti-Ge-Sb nanocomposite phase change thin film and its preparation and application
A nano-composite, low-power technology, applied in the field of materials in the field of microelectronics technology, can solve the problems of alloy thermal stability and crystalline resistivity are not high enough, to achieve fast SET operation speed, fast operation speed, high crystalline resistance Effect
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Embodiment 1
[0041] The present embodiment provides Ti-Ge-Sb nano phase change thin film, and its component is Ti 0.07 (Ge 8 Sb 92 ) 0.93 , the thickness of the film is 50nm.
[0042] The main steps of the main preparation method of the phase change film are as follows:
[0043] 1. Clean SiO2 2 / Si(100) substrate surface and back, remove dust particles, organic and inorganic impurities:
[0044] (a) Place the substrate in an ethanol solution, and clean it ultrasonically for 8 minutes to remove dust particles and inorganic impurities on the surface of the substrate;
[0045] (b) The substrate is placed in an acetone solution, and cleaned by ultrasonic waves for 8 minutes to remove organic impurities on the surface of the substrate;
[0046] (c) Place the substrate in deionized water, clean it with ultrasonic waves for 8 minutes, and clean the surface again;
[0047] (d) Take out the substrate and use high-purity N 2 Blow dry the front and back, and place in a dry box for later use. ...
Embodiment 2
[0057] The present embodiment provides Ti-Ge-Sb nano phase change thin film, and its component is Ti 0.14 (Ge 8 Sb 92 ) 0.86 , the thickness of the film is 50nm.
[0058] The main steps of the main preparation method of the phase change film are as follows:
[0059] 1. Clean SiO2 2 / Si(100) substrate surface and back, remove dust particles, organic and inorganic impurities:
[0060] (a) Place the substrate in an ethanol solution, and clean it ultrasonically for 8 minutes to remove dust particles and inorganic impurities on the surface of the substrate;
[0061] (b) The substrate is placed in an acetone solution, and cleaned by ultrasonic waves for 8 minutes to remove organic impurities on the surface of the substrate;
[0062] (c) Place the substrate in deionized water, clean it with ultrasonic waves for 8 minutes, and clean the surface again;
[0063] (d) Take out the substrate and use high-purity N 2 Blow dry the front and back, and place in a dry box for later use. ...
Embodiment 3
[0073] The present embodiment provides Ti-Ge-Sb nano phase change thin film, and its component is Ti 0.28 (Ge 8 Sb 92 ) 0.72 , the thickness of the film is 50nm.
[0074] The main steps of the main preparation method of the phase change film are as follows:
[0075] 1. Clean SiO2 2 / Si(100) substrate surface and back, remove dust particles, organic and inorganic impurities:
[0076] (a) Place the substrate in an ethanol solution, and clean it ultrasonically for 8 minutes to remove dust particles and inorganic impurities on the surface of the substrate;
[0077] (b) The substrate is placed in an acetone solution, and cleaned by ultrasonic waves for 8 minutes to remove organic impurities on the surface of the substrate;
[0078] (c) Place the substrate in deionized water, clean it with ultrasonic waves for 8 minutes, and clean the surface again;
[0079] (d) Take out the substrate and use high-purity N 2 Blow dry the front and back, and place in a dry box for later use. ...
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