A lateral double diffused metal oxide semiconductor device

Abstract

The invention relates to a lateral double-diffused metal oxide semiconductor device. The lateral double-diffused metal oxide semiconductor device comprises a device part, a terminal part and a P type substrate; a high-voltage N type region, an N type drift region, a P type body region 4A1 and a P type body region 4A2 are arranged over the P type substrate; the P type body region 4A1 is positioned in the device part; the P type body region 4A2 is positioned in the terminal part, and formed by diffusion of the P type body region 4A1 in the device part; a gate oxidization layer and a polycrystalline silicon gate field plate are also arranged over the high-voltage N type region; the device part further comprises an N type drain region, an N type source region, a P type region and a metal contact, wherein a shallow trench isolation region is arranged in the N type drift region; the shallow trench isolation region is shaped as a straight bar; the shallow trench isolation region extends to the terminal part from the device part; namely, the width of the shallow trench isolation region is the same as that of the N type drift region; and furthermore, the N type drain region, the N type source region, the P type region and the metal contact are not arranged over the P type body region 4A2 and the N type drift region of the terminal part. By means of the lateral double-diffused metal oxide semiconductor device disclosed by the invention, the breakdown voltage is improved when various performance parameters of an LDMOS device are kept same.

Description

technical field [0001] The invention relates to the technical field of power semiconductor devices, and relates to a lateral double-diffused metal oxide semiconductor device, which can be applied to the design of the terminal structure of the power semiconductor device. Background technique [0002] With the rapid development of semiconductor technology and its application fields, the manufacturing process and structure of power semiconductor devices are constantly improving, which promotes the development of power devices in the direction of high performance. [0003] Among power devices, Lateral Double-Diffused MOSFET (LDMOS for short) has the advantages of high withstand voltage, high input impedance and easy integration, so it is widely used in the manufacture of semiconductor integrated circuits. Compared with conventional MOSFETs, LDMOS devices have a low-doped drift region. When a high voltage is applied between the drain and the source, since the drift region has a ...

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Problems solved by technology

[0005] Aiming at the problem of early breakdown due to low breakdown voltage at the end of the width direction of LDMOS devices, the present invention provides a lateral double-diffused metal oxide semiconductor device, which can maintain LDMOS When the performance parameters of the device remain unchanged, its breakdown voltage is effectively improved, and the problem of early breakdown of the terminal part of the LDMOS device is solved.

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