Epitaxial structure for optimizing ultraviolet light-emitting diode (LED) luminous layer and growth method of epitaxial structure

Abstract

The invention provides an epitaxial structure for optimizing an ultraviolet light-emitting diode (LED) luminous layer. The epitaxial structure sequentially comprises a sapphire substrate, a high-temperature UGaN layer, an N-type GaN layer, a multi-quantum well (MQW) structure, an active region quantum-well luminous layer and a P-type GaN layer from bottom to top, wherein the active region quantum-well luminous layer comprises In<x>Ga<1-x>N / AlGaN multi-quantum wells in 3-30 periods, each In<x>Ga<1-x>N / AlGaN multi-quantum well also comprises a coverage layer in behind of a well layer, Al constituent doped in the coverage layer is gradually grown, the introduction of the Al constituent is gradually risen in a slope way, is performed at a constant speed and finally is gradually reduced in the slope way, the time and the ratio of the two gradual changing process in the slope way are same, and the amount of the Al constituent accounts for 1-60% of Al constituent in a multi-quantum barrier. By the growth method of the epitaxial structure, electron leakage can be reduced, the non-radiation recombination is reduced, the electron distribution in the quantum wells is improved, the current is uniformly extended, and the growth method is an effective method for improving the luminous efficiency of an ultraviolet LED; and meanwhile, the device has favorable luminous efficiency, and the photoelectric performance of the device is further improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor devices, in particular to an epitaxial structure and a growth method for optimizing an ultraviolet LED light-emitting layer. Background technique [0002] Ultraviolet Light-Emitting Diodes based on III-nitride wide bandgap semiconductor materials have broad application prospects in the fields of sterilization, polymer curing, special lighting, phototherapy, and biochemical detection. . [0003] With the continuous development of LEDs, GaN-based high-brightness LEDs have been commercialized on a large scale, and have shown strong market potential in fields such as landscape lighting, backlight applications, and optical communications. At the same time, the development of white LED solid-state lighting is in full swing, which is triggering the third lighting revolution. With the gradual maturity of the field of visible light, people gradually shift the focus of research to ultraviolet light ...

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Problems solved by technology

[0005] In view of the above-mentioned shortcomings of the prior art, the purpose of the present invention is to provide an optimized epitaxial structure of the ultraviolet LED light-emitting layer and a growth method thereof, which are used to solve the problem of low radiation recombination efficiency of the quantum wells in the prior art and the problems of the ultraviolet LED light-emitting layer. Low luminous efficiency and current expansion problems

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