Composite cooling and crystallization accelerating equipment in vacuum furnace

Abstract

The invention provides composite cooling and crystallization accelerating equipment in a vacuum furnace. The composite cooling and crystallization accelerating equipment comprises a support frame, a water cooling jacket and an argon pipe, wherein the water cooling jacket is of a tapered cylinder shape; a circulating water path is arranged in the water cooling jacket; the argon pipe is arranged in the support frame provided with a water inlet pipe and penetrates through the water cooling jacket; the argon pipe is wound in the water cooling jacket several circles; a plurality of exhaust holes are formed in positions attached to the argon pipe on an inner wall of the water cooling jacket. The composite cooling and crystallization accelerating equipment provided by the invention can improve the quality of crystals and can increase crystallization speed; the designed cold air holes form a certain angle to perfectly avoid air flow interference, and form high and low echoing together with an original air inlet so as to form integral cavity protection on crystal rods from top to bottom.

Description

technical field [0001] The invention belongs to the field of crystal forming equipment, and in particular relates to a compound cooling speed-increasing crystal forming equipment in a vacuum furnace. Background technique [0002] At present, monocrystalline silicon for solar energy is mainly produced by the Czochralski method, and now there is also a casting method to produce monocrystalline silicon. During the process, the melting of the seed crystal is controlled so that the seed crystal or a part of the seed crystal remains solid. During the cooling process, the quasi-single crystal silicon crystallizes along the crystal direction of the seed crystal. The defect density of the crystal produced by this method is relatively high. At the same time, the melting method of this method also puts forward higher requirements on the coating inside the crucible, which indirectly increases the cost. Therefore, in order to solve these problems, it is necessary to carry out structural ...

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Problems solved by technology

[0002] At present, monocrystalline silicon for solar energy is mainly produced by the Czochralski method, and now there is also a casting method to produce monocrystalline silicon. During the process, the melting of the seed crystal is controlled so that the seed crystal or a part of the seed crystal remains solid. During the cooling process, the quasi-single crystal silicon crystallizes along the crystal direction of the seed crystal. The defect density of the crystal produced by this method is relatively high. At the same time, the melting method of this method also puts forward higher requirements on the coating inside the crucible, which indirectly increases the cost. Therefore, in order to solve these problems, it is necessary to carry out structural improvements on the device for preparing cast single crystal silicon by directional solidification. Improve

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