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Storage device and data access method

A storage device and storage particle technology, applied in the storage field, can solve problems such as long pin traces, reduce PCB process requirements, avoid multi-layer design, and ensure signal integrity.

Active Publication Date: 2020-04-14
HUAWEI TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In order to solve the problem in the prior art that when the same pins in two storage particles connected by the same wire in DDR Dual Rank, the wire connecting one of the pins is longer, an embodiment of the present invention provides a storage device and data access methods

Method used

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  • Storage device and data access method
  • Storage device and data access method

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Embodiment Construction

[0049] In order to make the object, technical solution and advantages of the present invention clearer, the implementation manner of the present invention will be further described in detail below in conjunction with the accompanying drawings.

[0050] In order to facilitate the understanding of the technical solutions provided by the embodiments of the present invention, firstly, the related content of DDR Dual Rank is introduced.

[0051] As mentioned in the background, the DDR Dual Rank includes two symmetrically arranged Ranks. Among them, Rank is defined in the following way: In order to ensure the normal operation of the central processing unit (Central Processing Unit, referred to as CPU), the traditional memory system must transmit the data required by the CPU in one transmission cycle at one time, and the CPU can accept the data in one transmission cycle. The data capacity is the bit width of the system bus. For example, a 64-bit processor can transmit 64 bits of data...

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Abstract

A storage apparatus includes a printed circuit board (PCB) and multiple memory chips symmetrically arranged on two sides of the PCB, where multiple memory chips on one side of the PCB form a rank, and multiple memory chips on the other side of the PCB form a rank; a memory chip includes multiple pins; multiple cables are disposed in the PCB; and one cable of the multiple cables is connected to two pins in a same position on the two sides of the PCB.

Description

technical field [0001] The invention relates to the field of storage technology, in particular to a storage device and a data access method. Background technique [0002] Dual-Inline-Memory-Modules (Dual-Inline-Memory-Modules, detection DIMM) usually include a printed circuit board (Printed Circuit Board, referred to as PCB) and a plurality of storage particles distributed on the PCB, the storage particles can usually It is realized by adopting the most widely used double data rate synchronous dynamic random access memory (Double Data Rate Synchronous Dynamic Random, referred to as DDR SDRAM). The multiple storage particles are distributed on both sides of the PCB to form a symmetrical structure. The storage particles on each side form an independent arrangement (Rank), and the same pins of the storage particles at the same position are connected to the same wiring. The topology is called DDR Dual Rank structure (DDR Dual Rank). Wherein, the PCB in the DIMM has a multi-lay...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G06F13/16
CPCG06F13/1684G06F13/1668G06F13/4022G06F13/4068G11C5/025G11C5/04G11C5/066G11C8/12G11C2207/105
Inventor 吴让亮陈玉柱
Owner HUAWEI TECH CO LTD
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