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A two-dimensional cuprous iodide material, its preparation and application

A cuprous iodide, two-dimensional material technology, applied in the field of nanomaterials, can solve the problems of uneven morphology, thick nanosheets, poor crystallinity, etc., and achieve the effects of good morphology, regular morphology and good crystallinity

Active Publication Date: 2020-03-13
HUNAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0011] The first purpose of the present invention is to solve the technical problems of existing preparation methods such as the thickness of nanosheets, uneven appearance, poor crystallinity, and poor appearance. The present invention provides a two-dimensional cuprous iodide material. Preparation method, by replacing the substrate, cuprous iodide nanosheets and cuprous iodide heterojunction products can be prepared

Method used

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  • A two-dimensional cuprous iodide material, its preparation and application
  • A two-dimensional cuprous iodide material, its preparation and application
  • A two-dimensional cuprous iodide material, its preparation and application

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0076] Preparation of cuprous iodide nanosheets: Add 0.5 g of cuprous iodide powder into a small porcelain boat, and then put it into the constant temperature zone of a horizontal quartz tube with a diameter of one inch. With a small piece of Si / 300nmSiO 2The silicon oxide sheet is used as the growth substrate of the nanosheet, placed in another porcelain boat, and placed in the variable temperature zone downstream of the furnace to obtain an appropriate crystal growth temperature. Before growing, the quartz tube is first flushed with argon to remove oxygen and water vapor. Then the furnace is rapidly raised to 360°C, and the argon gas flow rate is adjusted to 225 sccm, and the temperature is kept constant for 35 minutes. A single crystal cuprous iodide nanosheet will be formed on the silicon wafer position 9em away from the source. The experimental device for preparing cuprous iodide nanosheets is shown in Fig. figure 2 As shown (the color in the furnace is red and gradual...

Embodiment 2

[0079] Preparation of cuprous iodide nanosheets: Add 0.5 g of cuprous iodide powder into a small porcelain boat, and then put it into the constant temperature zone of a horizontal quartz tube with a diameter of one inch. With a small piece of Si / 300nmSiO 2 The silicon oxide sheet is used as the growth substrate of the nanosheet, placed in another porcelain boat, and placed in the variable temperature zone downstream of the furnace to obtain an appropriate crystal growth temperature. Before growing, the quartz tube is first flushed with argon to remove oxygen and water vapor. Then the furnace is rapidly raised to 390°C, and the argon gas flow rate is adjusted to 225 sccm, and the temperature is kept constant for 10 minutes, and single crystal cuprous iodide nanosheets will be formed at the position of the silicon wafer 9 cm away from the source. The experimental device for preparing cuprous iodide nanosheets is shown in Fig. figure 2 As shown (the color in the furnace is red...

Embodiment 3

[0082] Preparation of cuprous iodide nanosheets: Add 0.5 g of cuprous iodide powder into a small porcelain boat, and then put it into the constant temperature zone of a horizontal quartz tube with a diameter of one inch. With a small piece of Si / 300nmSiO 2 The silicon oxide sheet is used as the growth substrate of the nanosheet, placed in another porcelain boat, and placed in the variable temperature zone downstream of the furnace to obtain an appropriate crystal growth temperature. Before growing, the quartz tube is first flushed with argon to remove oxygen and water vapor. Then the furnace was quickly raised to 410°C, and the argon gas flow rate was adjusted to 200 sccm, and the temperature was kept constant for 20 minutes. A single-crystal cuprous iodide nanosheet would be formed at the position of the silicon wafer at a distance of 8 em from the source. The experimental device for preparing cuprous iodide nanosheets is shown in Fig. figure 2 As shown, the optical photog...

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Abstract

The invention relates to a preparation method of a cuprous iodide two-dimensional material. Cuprous iodide nanosheets and vertical heterojunctions thereof enrich the varieties of the new two-dimensional material and the heterojunctions, and provide new possibility for discovering new electronic and photoelectronic device equipment. The method comprises the following steps: putting a porcelain boat with cuprous iodide powder into a constant-temperature area of a tubular furnace, taking empty Si / 300nmSiO2 or Si / 300nmSiO2 with tungsten selenide and tungsten sulfide as a growing substrate of the nanosheet, and putting into a variable-temperature area at the downstream of the furnace to obtain proper crystal growth temperature; and taking argon as carrier gas, adjusting the flow of the argon to be 10 to 225 sccm, setting the temperature of the constant-temperature area to be 360 to 470 DEG C and maintaining constant temperature for 1 to 40 minutes to obtain the cuprous iodide two-dimensional material. The preparation methods of the tungsten selenide and tungsten sulfide nanosheets comprise the same steps as above. The cuprous iodide nanosheets have the thickness being 1 to 300 nm and the size being 1 to 5 microns, have regular triangular and hexagonal shapes and have high crystallinity, and the preparation method of the heterojunctions is simple.

Description

technical field [0001] The invention relates to the field of nanomaterials, in particular to a method for preparing cuprous iodide nanosheets and cuprous iodide-two-dimensional material vertical heterojunctions. Background technique [0002] The discovery of graphene has triggered an upsurge in the research of two-dimensional materials in the scientific community. In recent years, most of the research on two-dimensional materials and heterojunctions has focused on boron nitride and transition metal chalcogenides (TMDs). In order to further explore other new 2D materials, metal iodides have gradually attracted attention due to their similar structures to TMDs. [0003] As an iodide material of I-VII, cuprous iodide not only enriches the types of two-dimensional materials, but also provides new opportunities for discovering new electronic and optoelectronic properties. Cuprous iodide has three crystal phases of α, β and γ: when the temperature is higher than 407°C, cuprous i...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/12C30B23/00C30B29/64B82Y40/00
CPCB82Y40/00C30B23/00C30B29/12C30B29/64
Inventor 段镶锋段曦东姚康康
Owner HUNAN UNIV
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