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Double-85 anti-PID polycrystalline solar cell manufacturing process

A technology for solar cells and manufacturing processes, applied in sustainable manufacturing/processing, circuits, photovoltaic power generation, etc., can solve problems such as the power drop of cells and modules, and achieve the effect of extending the life of modules, good product performance, and convenient inspection.

Active Publication Date: 2017-08-25
ZHEJIANG GUANGLONG ENERGY TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the PID phenomenon of photovoltaic modules is relatively serious, resulting in a significant drop in the power of cells and modules

Method used

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  • Double-85 anti-PID polycrystalline solar cell manufacturing process
  • Double-85 anti-PID polycrystalline solar cell manufacturing process
  • Double-85 anti-PID polycrystalline solar cell manufacturing process

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0072] The manufacturing process of the double 85 anti-PID polycrystalline solar cells comprises the following steps:

[0073] a. The crystalline silicon wafer after cleaning, diffusion, and etching will generate a layer of 1nm SiO on the surface of the crystalline silicon wafer through an ozone generator 2 Oxide film;

[0074] b. Put the crystalline silicon wafer completed in step a on the graphite boat through the loading and unloading system, and put it into the tubular PECVD for pre-deposition. The PECVD parameters are set as: ammonia gas flow rate 4.5-5.0slm, radio frequency power 5000-6000wart , time 0-60s;

[0075] c. Deposit the crystalline silicon wafer completed in step b by tubular PECVD to obtain a high-refractive-index silicon nitride anti-reflection film with a first-layer refractive index of 2.30-2.35. The PECVD parameters are set to: ammonia gas flow rate 4.5- 5.0slm, silane flow rate 1000-1100sccm, pressure 1650-1750mTor, RF power 5500-6500wart, switching ti...

Embodiment 2

[0087] The manufacturing process of the double 85 anti-PID polycrystalline solar cells comprises the following steps:

[0088] a. After cleaning the textured, diffused and etched crystalline silicon wafer, generate a layer of 2nm SiO on the surface of the crystalline silicon wafer through an ozone generator 2 Oxide film;

[0089] b. Put the crystalline silicon wafer completed in step a on the graphite boat through the loading and unloading system, and put it into the tubular PECVD for pre-deposition. The PECVD parameters are set as: ammonia gas flow rate 4.5-5.0slm, radio frequency power 5000-6000wart , time 0-60s;

[0090] c. Deposit the crystalline silicon wafer completed in step b by tubular PECVD to obtain a high-refractive-index silicon nitride anti-reflection film with a first-layer refractive index of 2.30-2.35. The PECVD parameters are set to: ammonia gas flow rate 4.5- 5.0slm, silane flow rate 1000-1100sccm, pressure 1650-1750mTor, RF power 5500-6500wart, switching ...

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Abstract

The invention provides a double-85 anti-PID polycrystalline solar cell manufacturing process, so as to solve the technical problems that the existing photovoltaic module has a serious PID phenomenon, and the cell power and the module power are thus greatly reduced. The double-85 anti-PID polycrystalline solar cell manufacturing process comprises the following steps: a, according to a crystal silicon wafer after cleaning, texturing, diffusion and etching, a layer of 1-2 nm SiO2 oxide film grows on the surface of the crystal silicon wafer through an ozone generation device; b, the crystal silicon wafer completed in the step a is assembled on a graphite boat through a wafer assembling and disassembling system, the crystal silicon wafer is put to a tubular PECVD for pre-deposition; c, the crystal silicon wafer completed in the step b is deposited by using the tubular PECVD; d, the crystal silicon wafer completed in the step c is deposited again by using the tubular PECVD; and e, the crystal silicon wafer on the graphite boat is cooled through the wafer assembling and disassembling system, and the crystal silicon wafer is removed. The double-85 anti-PID polycrystalline solar cell manufacturing process has the advantage of good product performance.

Description

technical field [0001] The invention belongs to the technical field of solar cells, and relates to a manufacturing process, in particular to a manufacturing process of double 85 anti-PID polycrystalline solar cells. Background technique [0002] Crystalline silicon solar cell is a semi-permanent physical battery that converts sunlight energy into electrical energy. With the extreme consumption of fossil energy, the exhaustion of energy generated and the increasingly serious greenhouse effect, human demand for new clean energy is becoming more and more more urgent. In the case of changing climate conditions and shortage of natural energy, photovoltaic power generation has attracted more and more attention from various countries. At this stage, whether it is the theoretical research of crystalline silicon batteries or the experimental research and development of crystalline silicon batteries, their performance has made great progress, and the performance of the batteries has ...

Claims

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Application Information

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IPC IPC(8): H01L31/18H01L31/068H01L31/0216
CPCH01L31/02167H01L31/02168H01L31/068H01L31/1804Y02E10/547Y02P70/50
Inventor 朱金浩蒋剑波朱世杰许布陈珏荣
Owner ZHEJIANG GUANGLONG ENERGY TECH
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