System for detecting water-vapor content in high-purity gas based on cavity ring down spectroscopy technology

Abstract

The invention discloses a system for detecting water-vapor content in a high-purity gas based on a cavity ring down spectroscopy technology. The system comprises a DFB laser control power source, a DFB laser, an optical collimator, an optical isolator, an acoustic optical modulator, a reflector, a matching lens, an optical resonator, piezoelectric ceramics, a piezoelectric ceramics control power source, a focusing lens, a detector, a trigger, a data acquisition card, and a computer. The laser emitted by the DFB laser successively passes through the optical collimator, the optical isolator, the acoustic optical modulator, the reflector, the matching lens, the optical resonator, the piezoelectric ceramics, and the focusing lens, and arrives to the detector. The piezoelectric ceramics control power source is connected with the piezoelectric ceramics. The detector is connected with the trigger and the data acquisition card. The trigger is connected with the acoustic optical modulator. The collected data of the data acquisition card is transmitted to the computer. Based on the system, the detection precision of the water-vapor content in the high-purity gas is about 100 pptv. In addition, the system does not need to calibrate instruments frequently, and the requirement for the environment humidity is high.

Description

technical field [0001] The invention relates to the technical field of optical cavity ring-down spectroscopy, in particular to a system for detecting water vapor content in high-purity gas based on optical cavity ring-down spectroscopy. Background technique [0002] In the past 20 years, the use of optical methods to detect and measure the content of gases has been widely used in environmental monitoring, medical diagnosis, combustion process control, security inspection and other fields. With the advancement of the semiconductor industry, ultra-high-purity gases play an extremely important role in the increasingly smaller geometrical features pursued in semiconductor integrated circuits. However, only a few parts per billion of water vapor in ultra-high-purity gases can affect the growth quality of semiconductor single crystals, and oxygen complexes in water will reduce the lifetime of minority carriers, which will directly affect the lifetime of components. Therefore, it ...

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Problems solved by technology

However, only a few parts per billion of water vapor in ultra-high-purity gases can affect the growth quality of semiconductor single crystals, and oxygen complexes in water will reduce the lifetime of minority carriers, which will directly affect the lifetime of components.

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