Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Thin film transistor and preparation method thereof and array substrate

A technology of thin film transistors and semiconductors, applied in the direction of transistors, semiconductor/solid-state device manufacturing, semiconductor devices, etc., can solve the problem of low mobility, achieve the effects of simplifying the process, saving costs, and improving device mobility and stability

Active Publication Date: 2017-07-07
BOE TECH GRP CO LTD
View PDF5 Cites 10 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Traditional silicon-based thin film transistors can no longer meet the actual needs due to their low mobility. Metal oxide thin film transistors have attracted widespread attention due to their advantages of high mobility, good uniformity, and simple manufacturing process.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Thin film transistor and preparation method thereof and array substrate
  • Thin film transistor and preparation method thereof and array substrate
  • Thin film transistor and preparation method thereof and array substrate

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0054] The embodiment of the present invention also provides a method for preparing a thin film transistor, including:

[0055] S10, such as Figure 4 As shown, a first metal layer is formed on the substrate 10, and the active region to be formed on the first metal layer is oxidized so that the material to be formed in the active region is a semiconductor, and the active layer 20 is formed.

[0056] Wherein, after the active region to be formed of the first metal layer is oxidized, the part oxidized to semiconductor on the first metal layer is used as the active region 23 of the active layer 20, and the part that is not oxidized is used as the active layer 20 source region 21 and drain region 22 .

[0057] Here, the manner of the oxidation treatment is not limited, as long as the active region to be formed of the first metal layer can be completely oxidized.

[0058] S20, such as Figure 2(a)-2(d) As shown, a gate insulating layer 60 , a gate 50 , a source 30 and a drain 40...

Embodiment 1

[0064] A method for preparing a thin film transistor is provided, such as Figure 5 As shown, it specifically includes the following steps:

[0065] S100 , as shown in FIG. 6( a ), forming a first metal layer 24 on the substrate 10 .

[0066] As an example, a photoresist layer having the first metal thin film and covering the first metal thin film can be sequentially formed on the substrate 10. After exposing and developing the photoresist layer, the photoresist can be completely reserved and partially covered to be A region with a pattern of the first metal layer is formed. Then, the first metal layer 24 is formed by etching the first metal film.

[0067] Among them, the first metal film with a thickness of 20nm-100nm can be formed by methods such as magnetron sputtering, DC sputtering, and evaporation, and its material can be indium, zinc, tin, copper, nickel, titanium, tungsten, Indium tin, indium zinc, zinc tin, indium zinc tin, etc.

[0068] S110 , as shown in FIG. 6(...

Embodiment 2

[0083] A method for preparing a thin film transistor is provided, such as Figure 7 As shown, it specifically includes the following steps:

[0084] S200 , as shown in FIG. 8( a ), form the stacked first metal layer 24 and the second metal layer 81 on the substrate 10 through the same patterning process.

[0085] Among them, the first metal layer with a thickness of 20nm-100nm can be formed by magnetron sputtering, DC sputtering, evaporation and other methods, and its material can be indium, zinc, tin, copper, nickel, titanium, tungsten, indium tin , indium zinc, zinc tin, indium zinc tin, etc.

[0086] The second metal layer with a thickness of 100nm-200nm can be formed by the same process, and its material can be Al, Ti, Ta, Hf, Zr, etc.

[0087] S210, as shown in FIG. 8(b), perform oxidation treatment on the to-be-formed active region on the first metal layer 24 and the to-be-formed gate insulating layer on the second metal layer 81, so that the to-be-formed active region...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a thin film transistor and a preparation method thereof and an array substrate, relates to the technical field of display and can reduce parasitic resistance between source and drain electrodes and an active region. The thin film transistor comprises an active layer arranged on a substrate, the source electrode, the drain electrode, a grid electrode and a gate insulation layer. The active layer comprises a source region, a drain region and the active region. The source region and the drain region are mainly made of metal; and the active region is made of a semiconductor material, the semiconductor material being formed by oxide of the metal.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a thin film transistor, a preparation method thereof, and an array substrate. Background technique [0002] In recent years, with the continuous development of various display technologies, such as LCD (Liquid Crystal Display, Liquid Crystal Display) display, OLED (Organic Light-Emitting Diode, Organic Light-Emitting Diode) display, flexible display, etc., large-size, high-resolution Display panel products emerge in endlessly. Traditional silicon-based thin film transistors can no longer meet the actual needs due to their low mobility. Metal oxide thin film transistors have attracted widespread attention due to their high mobility, good uniformity, and simple fabrication process. [0003] In the prior art, when manufacturing a metal oxide thin film transistor, a high-resistance metal oxide active layer is generally formed first, and then the area in the metal oxide active layer...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/786H01L29/45
CPCH01L29/45H01L29/7869H01L21/02554H01L21/02565H01L21/02614H01L29/66969H01L29/24H01L29/22H01L29/41733H01L21/0272H01L21/44H01L21/0331
Inventor 王国英孙宏达宋振
Owner BOE TECH GRP CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com