Self-heating measuring structure and measuring method for FinFET device, and electronic device

Abstract

The invention relates to a self-heating measuring structure and measuring method for an FinFET device, and an electronic device. The self-heating measuring method for the FinFET device comprises a step S1 of switching off the FinFET device in order to make the grid be in an open circuit state, and measuring the resistance value R0 of thermal variable resistance layers; step S2 of switching on the FinFET device in order to make the grid be in a conduction state, and measuring the resistance value R of the thermal variable resistance layers; and a step S3 of calculating the temperature of the thermal variable resistance layers after the temperature is increased in dependence on the increase of the resistance of the thermal variable resistance layers and the resistance temperature coefficient [alpha]. In the measuring structure, virtual grids are arranged among grids, and several rows of the thermal variable resistance layers connected with the virtual grids through a heat conduction material are arranged above a grid array, heat radiated from the grids are transmitted to the thermal variable resistance layers through the virtual grids, after the temperature of the thermal variable resistance layers is changed, the resistance is changed, and detection of the self-heating condition of the FinFET device is achieved by measuring the resistance of the thermal variable resistance layers.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular, the invention relates to a FinFET device self-heating measurement structure, a measurement method, and an electronic device. Background technique [0002] With the continuous development of semiconductor technology, in order to improve the performance of the device, the size of integrated circuit devices needs to be continuously reduced. With the continuous reduction of the size of CMOS devices, the development of three-dimensional designs such as fin field effect transistors (FinFET) has been promoted. [0003] Compared with the existing planar transistors, the FinFET device has superior performance in terms of channel control and short channel effect reduction; the planar gate structure is arranged above the channel, and the gate in the FinFET The fins are arranged around the fins, so static electricity can be controlled from three sides, and the performance in static electricity co...

AI Technical Summary

Problems solved by technology

[0004] With the continuous shrinking of the size of semiconductor devices, 3D devices face many challenges, wherein the fins have poor heat dissipation performance due to the narrow structure of the fins, which causes serious self-heating effects of FinFET devices, and the heating effect seriously affects Due to the reduction of device performance and charge carrier induced lattice vibrations (charge carrier induced lattice vibrations), the heating effect increases the temperature of the device and reduces the drive current, but for FinFET devices, the self-heating effect hard to detect

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