Negative photoresist

A negative photoresist and photosensitive technology, applied in optics, optomechanical equipment, photosensitive materials used in optomechanical equipment, etc., to achieve the effect of increasing the extinction characteristics and increasing the refractive index

Active Publication Date: 2017-06-23
SHENZHEN DALTON ELECTRONICS MATERIAL CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The technical problem to be solved by the present invention is to overcome the defects of the existing negative photoresist and provide a negative photoresist, which is mainly prepared from cycloaliphatic epoxy monomers and allyl acrylates. Sulfur resin, and modified with a colorless and transparent anhydride curing agent to obtain ...

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preparation example Construction

[0047] The preparation method of described negative photoresist comprises the following steps:

[0048] Step 1: Synthesis of alicyclic episulfide monomer a11: Accurately weigh 43 parts by mass of cycloaliphatic epoxy monomer a111 and 70 parts by mass of ethanol in a three-necked flask and mix evenly, then add 40 parts by mass of 14 parts by mass of KSCN mixture dissolved in ionic water, stirred and reacted at 50°C for 30 minutes, then stopped the reaction, separated and purified to obtain alicyclic episulfide monomer a11;

[0049] Step 2: Synthesis of alicyclic episulfide acrylic resin a1: in a four-necked flask equipped with a stirrer, condenser, thermometer and constant pressure dropping funnel, add 50 parts by mass of the alicyclic episulfide prepared in step 1 Monomer a11, 400*10 -6 The mass parts of the polymerization inhibitor was stirred evenly at 60° C., the temperature was raised to 80° C., and a mixture of 28 mass parts of allyl acrylic compound a12 and 1 mass part of...

preparation Embodiment 1

[0054] Step 1: Synthesis of cycloaliphatic episulfide monomer a11: Weigh 43 parts by mass of cycloaliphatic epoxy monomer a111 (using 3,4-epoxycyclohexylmethyl 3,4-epoxycyclohexyl formic acid Ester monomer) and 70 parts by mass of ethanol were placed in a three-neck round bottom flask and mixed evenly, then 14 parts by mass of KSCN mixture dissolved in 40 parts by mass of deionized water was added, stirred and reacted at 50°C for 30 minutes, then stopped, and separated and purified to obtain Cycloaliphatic episulfide monomer a11.

[0055] Step 2: Synthesis of alicyclic episulfide acrylic resin a1: in a four-necked flask equipped with a stirrer, condenser, thermometer and constant pressure dropping funnel, add 50 parts by mass of the alicyclic episulfide prepared in step 1 Monomer a11 and 400*10 -6 Mass parts of polymerization inhibitor p-methoxyphenol, stirred evenly at 60°C, heated to 80°C, added dropwise 28 mass parts of allyl acrylic compound a12 (using methacrylic acid) a...

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Abstract

The invention discloses a negative photoresist which comprises the following components in parts by mass: 100 parts of transparent high-refractive index photosensitive alkali-soluble resin A, 0.005-20 parts of photoinitiator B, 10-80 parts of reactive diluent C, and 20-60 parts of solvent D; the transparent high-refractive index photosensitive alkali-soluble resin A is obtained by modifying cycloaliphatic thiirane diacrylates resin a1 through an anhydride curing agent a2; the cycloaliphatic thiirane diacrylates resin a1 is formed by copolymerizing cycloaliphatic episulfide monomer a11 and allyl acrylic acid compound a12; the cycloaliphatic episulfide monomer a11 is obtained by displacing cycloaliphatic epoxy monomer a111. According to the negative photoresist, the resin is guaranteed to have photosensitivity, alkali solubility characteristics and the like, the system is transparent, the refractive index of the resin can be improved, the resin can be effectively applied into the negative photoresist, and the vanishing characteristic of the photoresist can be increased.

Description

technical field [0001] The invention relates to a negative photoresist. Background technique [0002] Photoresist is a photosensitive material and a medium for pattern transfer using photochemical reactions. It is mainly used in integrated circuits, packaging, optoelectronic devices, photonic devices, and flat panel displays. Photoresist is a light-sensitive mixed liquid mainly composed of film-forming resin, photoinitiator, solvent assistant and filler. According to the chemical reaction mechanism and development principle, photoresist can be divided into two types: positive photoresist and negative photoresist. [0003] Negative photoresists polymerize after exposure to generate insoluble substances. Before exposure, the photoresist is a linear polymer compound, which is soluble in organic solvents; after exposure, the polymer compound is cross-linked to form a three-dimensional network structure, which becomes an insoluble substance, thus forming a negative image opposi...

Claims

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Application Information

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IPC IPC(8): G03F7/038G03F7/004C08G75/00C08G75/06
CPCC08G75/00C08G75/06G03F7/004G03F7/038G03F7/0384G03F7/0388
Inventor 尤慧顾奇王胜林
Owner SHENZHEN DALTON ELECTRONICS MATERIAL CO LTD
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