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High-breakdown-voltage Schottky diode and making method

A Schottky diode, high breakdown voltage technology, applied in the field of microelectronics, can solve problems such as increased parasitic capacitance and enhanced parasitic effect

Active Publication Date: 2017-06-20
XIDIAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Although the above two structures can effectively improve the reverse breakdown characteristics of Schottky diodes, since the field limiting ring and the field plate structure both introduce dielectrics, it is bound to increase the parasitic effect and lead to an increase in parasitic capacitance.

Method used

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  • High-breakdown-voltage Schottky diode and making method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] Example 1, the substrate is sapphire, 12 H with a width of 2 μm and a depth of 20 μm + Injection area, H + The spacing between implanted regions is sequentially increased to 0.5 μm for Schottky diodes.

[0036] Step 1, wash the sample.

[0037] 1a) For Ga that has been grown epitaxially on the substrate 2 o 3 The sample of the layer was organically cleaned, ultrasonicated with acetone for 5 minutes, ethanol for 5 minutes, and then washed with flowing deionized water, in which the epitaxially grown Ga 2 o 3 The layer consists of two layers, the first layer has a carrier concentration of 10 14 cm -3 , Ga with a thickness of 1.5 μm 2 o 3 epitaxial layer, the second layer has a carrier concentration of 10 17 cm -3 , low-doped n-type Ga with a thickness of 130nm 2 o 3 film;

[0038] 1b) Chemical cleaning

[0039] Place the organically cleaned samples in HF:H 2 Corrode in O=1:1 solution for 30s, then wash with flowing deionized water and blow dry with high-puri...

Embodiment 2

[0070] Embodiment 2, making substrate is Ga 2 o 3 , 10 H with a width of 2.5 μm and a depth of 35 μm + Injection area, H + The spacing between the implanted regions was sequentially increased to 0.7 μm for Schottky diodes.

[0071] Step one, wash the sample.

[0072] 1.1) For Ga that has been epitaxially grown on the substrate 2 o 3 Layer samples were sonicated with acetone for 5 minutes, ethanol for 5 minutes, and then washed with flowing deionized water, in which the epitaxially grown Ga 2 o 3 The layer consists of two layers, the first layer has a carrier concentration of 10 15 cm -3 , Ga with a thickness of 1.3 μm 2 o 3 epitaxial layer, the second layer has a carrier concentration of 5×10 17 cm -3 , low-doped n-type Ga with a thickness of 110nm 2 o 3 film;

[0073] 1.2) Chemical cleaning

[0074] Step 1b) in Example 1 of this step is the same.

[0075] Step 2, depositing SiO with a thickness of 50nm 2 mask.

[0076] Put the dried sample into PECVD equipm...

Embodiment 3

[0103] Embodiment 3, making substrate is MgAl 2 o 4 , eight H with a width of 3 μm and a depth of 50 μm + Injection area, H + The spacing between the implanted regions was sequentially increased to 1.0 μm for Schottky diodes.

[0104] Step A, wash the sample.

[0105] A1) For Ga that has been epitaxially grown on the substrate 2 o 3 Layer samples were sonicated with acetone for 5 minutes, ethanol for 5 minutes, and then washed with flowing deionized water, in which the epitaxially grown Ga 2 o 3 The layer consists of two layers, the first layer has a carrier concentration of 10 16 cm -3 , Ga with a thickness of 1 μm 2 o 3 epitaxial layer, the second layer has a carrier concentration of 10 18 cm -3 , low-doped n-type Ga with a thickness of 100nm 2 o 3 film;

[0106] A2) Chemical cleaning

[0107] This step is the same as step 1b) in Example 1.

[0108] Step B, depositing SiO with a thickness of 50nm 2 mask.

[0109] Put the dried sample into PECVD equipment t...

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Abstract

The invention discloses a high-breakdown-voltage Schottky diode and a making method. The high-breakdown-voltage Schottky diode comprises a substrate (5), a Ga2O3 epitaxial layer (3), a low-doped n-type Ga2O3 film (4) and a passivation layer (8) from bottom to top. A ring metal cathode (1) and a circular metal anode (2) are arranged in the passivation layer (8). The ring center of the ring metal cathode and the circular center of the circular metal anode are at the same point. A silicon ion implanted region (7) is arranged under the ring metal cathode (1). Multiple H+ implanted regions (6) for adjusting the concentration of electrons are arranged between the Ga2O3 epitaxial layer (3) and the low-doped n-type Ga2O3 film (4), wherein the first H+ implanted region is close to the edge of a Schottky contact, and the distance of the last H+ implanted region from the edge of the inner ring of the metal cathode is greater than 1 micron. Through attraction of H+ to electrons, the concentration of electrons at the edge of the Schottky contact is reduced, and the reverse breakdown voltage of the Schottky diode is improved.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, in particular to a Schottky diode with high breakdown voltage, which can be used in high-frequency circuits. Background technique [0002] Schottky diodes, also known as Schottky barrier diodes, are based on the metal-semiconductor junction formed by the contact of metal and semiconductor. The advantages of Schottky diodes mainly include the following two aspects: 1) Since the Schottky barrier height is lower than the PN junction barrier height, its forward voltage and forward voltage drop are lower than those of PN junction diodes; 2) due to Schottky diode is a majority carrier conduction device with very little reverse recovery charge, so there is no problem of minority carrier lifetime and reverse recovery, so the switching speed is very fast and the switching loss is particularly small, especially suitable for high frequency applications. However, since the electric field of the Sc...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/872H01L21/329
Inventor 冯倩黄璐韩根全李翔邢翔宇方立伟张进成郝跃
Owner XIDIAN UNIV
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