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Method for directly growing tungsten oxide film on conducting glass

A technology of conductive glass and tungsten oxide, which is applied in the field of materials, can solve the problems of complicated process, difficult to obtain target products, and long time, and achieve the effect of simple preparation process, low cost and short time

Inactive Publication Date: 2017-06-20
SHANGHAI SECOND POLYTECHNIC UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the sol-gel process is complicated and takes a long time; the materials produced are diverse, and it is difficult to obtain the target product

Method used

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  • Method for directly growing tungsten oxide film on conducting glass
  • Method for directly growing tungsten oxide film on conducting glass
  • Method for directly growing tungsten oxide film on conducting glass

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] 1) Dissolve 20mmol tungsten hexachloride in a mixed solution of 20ml absolute ethanol and 20ml tetrahydrofuran.

[0033] 2) Add 1ml of polyethylene glycol to the solution obtained in 1), then transfer it to a polytetrafluoroethylene reactor, and then put a piece of 2.5×5 cm in the reactor 2 The FTO conductive glass with its conductive side facing down was placed in an oven at 180 °C for 6 h, and then cooled to room temperature naturally.

[0034] 3) Take out the FTO conductive glass in 2) the reaction kettle, wash it with absolute ethanol, and put the obtained film in a muffle furnace at 400 °C for 1 h, and the film turns from blue to white, and the performance to be tested is obtained. Tungsten oxide film.

[0035] The SEM photo of the tungsten oxide film prepared in this embodiment is as follows figure 1 As shown, it is a nanocluster formed by some nanowires; this structure is relatively uniform, and the injection and extraction of ions are easier, and it is suitabl...

Embodiment 2

[0038] 1) Dissolve 20mmol tungsten hexachloride in a mixed solution of 30ml absolute ethanol and 10ml tetrahydrofuran.

[0039] 2) Add 1ml of polyethylene glycol to the solution obtained in 1), then transfer it to the core of the polytetrafluoroethylene reactor, and then put a piece of 2.5×5 cm in the core of the reactor 2 FTO conductive glass, with its conductive side facing down, was placed in an oven at 180°C for 6 hours, and cooled naturally to room temperature.

[0040] 2) Take out the FTO conductive glass in the reaction kettle, wash it with absolute ethanol, put the obtained film in a muffle furnace at 400 °C for 1 h, and the film turns from blue to white, and the tungsten oxide with the performance to be tested is obtained. film. figure 2 It is the SEM photograph of the tungsten oxide film prepared in Example 2, which is in the form of nanosheets. It is calculated that the coloring time of the tungsten oxide electrochromic device is about 23 s and the fading time is ...

Embodiment 3

[0042] 1) Dissolve 20mmol tungsten hexachloride in a mixed solution of 10ml absolute ethanol and 30ml tetrahydrofuran.

[0043] 2) Add 1ml of polyethylene glycol to the solution obtained in 1), then transfer it to the core of the polytetrafluoroethylene reactor, and then put a piece of 2.5×5 cm in the core of the reactor 2 FTO conductive glass, with its conductive side facing down, was placed in an oven at 180°C for 12 hours, and cooled naturally to room temperature.

[0044] 2) Take out the FTO conductive glass in the reaction kettle, wash it with absolute ethanol, put the obtained film in a muffle furnace at 400 °C for 1 h, and the film turns from blue to white, and the tungsten oxide with the performance to be tested is obtained. film. image 3 It is a SEM photo of the tungsten oxide thin film prepared in Example 3 of the present invention.

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Abstract

The invention discloses a method for directly growing a tungsten oxide film on conducting glass. The method disclosed by the invention comprises the following specific steps: firstly mixing tungsten hexachloride, absolute ethyl alcohol, tetrahydrofuran and polyethylene glycol, then transferring to a hydrothermal reaction kettle, putting a piece of FTO conducting glass into the hydrothermal reaction kettle, putting a conducting face downwards, performing constant-temperature hydrothermal reaction for certain time and naturally cooling to room temperature after reaction finishes; taking the FTO conducting glass in the reaction kettle out, washing through absolute ethyl alcohol and putting an obtained film into a muffle furnace to be roasted in certain temperature to obtain a tungsten oxide electrochromism film. The tungsten oxide electrochromism film material prepared through the method disclosed by the invention has even morphology and can be applied to electrochromism and the fields related to the electrochromism.

Description

technical field [0001] The invention relates to the field of material technology, in particular to a method for directly growing a tungsten oxide film on conductive glass. Background technique [0002] Tungsten oxide belongs to transition metal oxides and is a semiconductor material with various symmetric structures such as hexagonal and cubic. Tungsten oxide shows great application prospects in information display devices, high-sensitivity optical storage materials and color-changing glasses. A cathode inorganic electrochromic material with the longest research history. In particular, nano-tungsten oxide has a huge specific surface area, and its volume effect, surface effect, quantum size effect and macroscopic quantum tunneling effect are remarkable, making its application field continue to expand, and can be used as solar energy absorbing materials, stealth materials, catalyst materials and gas Sensitive materials, etc. Products using tungsten trioxide as electrochromic...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C03C17/34G02F1/153
CPCC03C17/3417C03C2217/70C03C2217/94G02F1/1533
Inventor 王金敏朱俊宇左月
Owner SHANGHAI SECOND POLYTECHNIC UNIVERSITY
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