Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for monitoring neutron radiation environment by using SRAM memorizers

A technology for environmental monitoring and storage, applied in the field of radiation detection, can solve problems such as large measurement error and radioactivity, and achieve the effects of easy implementation, low cost, and high measurement accuracy

Active Publication Date: 2017-06-13
NORTHWEST INST OF NUCLEAR TECH
View PDF6 Cites 19 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In order to solve the technical problem of large measurement error and radioactivity in the existing neutron radiation parameter measurement method under low fluence conditions, the present invention provides a method for neutron radiation environment monitoring using SRAM memory

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for monitoring neutron radiation environment by using SRAM memorizers
  • Method for monitoring neutron radiation environment by using SRAM memorizers
  • Method for monitoring neutron radiation environment by using SRAM memorizers

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0026] The single event effect is the ionizing radiation damage effect caused by the interaction between a single ray particle and the sensitive area of ​​the microelectronic device. The single event effect can cause the stored data of the digital circuit to flip, and the function of the electronic system is disordered. With the improvement of semiconductor process integration, the characteristic process size of CMOS process integrated circuits is continuously reduced, and it is also more and more sensitive to single event effects. Although the single event effect has a serious impact on the reliability of the electronic system, because the single event effect is a random effect, its linear and thresholdless effect characteristics can be used to monitor the particle beam flow in the radiation environment.

[0027] According to the characteristics of single event effects, they can be roughly divided into two categories: non-destructive and destructive. The former is called the ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention belongs to the field of radiation detection and relates to a method for monitoring the neutron radiation environment by using SRAM memorizers. The method includes the following steps that 1, neutron radiation calibration is conducted on SRAM memorizers different in types respectively, and a relation curve of the data flipping number and the neutron fluence are drawn; 2, the N type SRAM memorizer with the data flipping number keeping a linear relation with the neutron fluence is screened out, and the slope of the fitting curve serves as the neutron single ion effect flipping section of the N type SRAM memorizer; 3, the N type SRAM memorizer is placed in a to-be-monitored neutron radiation environment, and a relation curve of the data flipping number and the neutron fluence is drawn. According to the method, the linear and non-threshold characteristics of the neutron single ion flipping effects of the SRAM memorizers are made use of, neutron fluence monitoring in a reactor, a neutron accelerator and other neutron radiation environments is achieved, and experimental results show that the method can still maintain high measurement when the neutron fluence is very low.

Description

technical field [0001] The invention belongs to the field of radiation detection and relates to a method for monitoring neutron radiation environment by using SRAM memory. Background technique [0002] The neutron radiation environment is generally produced by reactors, accelerators and other facilities. Monitoring the neutron radiation environment is one of the necessary means to study the performance of nuclear devices. Monitoring the neutron radiation environment can be used to analyze whether the operation of nuclear facilities is stable; The measurement of neutron radiation environment is very important for nuclear technology application research using neutron radiation environment, and the accuracy of neutron radiation parameter measurement is an important prerequisite for carrying out related research. [0003] At present, the measurement of neutron radiation parameters such as reactors and neutron accelerators usually uses methods such as activated foil measurement. ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G01T3/08G11C11/413
CPCG01T3/08G11C11/413
Inventor 陈伟刘岩郭晓强杨善潮齐超
Owner NORTHWEST INST OF NUCLEAR TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com