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Multilayer film heterostructure and its preparation method and application

A heterostructure, multi-layer film technology, applied to devices applying electro-magnetic effects, thermoelectric devices and instruments only using Peltier or Seebeck effects, etc. , unfavorable spin current detection and other problems, to achieve the effect of increasing the number and expanding the range of materials

Active Publication Date: 2017-05-31
INST OF PHYSICS - CHINESE ACAD OF SCI +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the past three years, obvious inverse spin Hall effect ISHE has been observed in non-magnetic metal Pt, W, Ta, Cu(Bi), Au(W), Cu(Au) and other thin film materials. Subsequently, researchers began to The investigation of the inverse spin Hall effect ISHE of ferromagnetic metals, however, is different from the detection of the inverse spin Hall effect ISHE of non-magnetic materials, ferromagnetic materials will produce anomalous Nens under the action of temperature gradient and external magnetic field The special effect ANE and the anomalous Rigi-Leduc effect ARL, ANE, ARL and ISHE are entangled together, which brings troubles that cannot be solved for a while for the detection of spin currents. Relevant research groups in the world have also carried out research on this problem Some related studies, but there are some restrictions on the temperature of the system, the coercive force of the ferromagnetic material, and the thickness of the film
[0004] In addition, for the transverse spin Seebeck device, due to the different thermal conductivity of different materials, the transverse temperature gradient will generate a longitudinal temperature gradient, resulting in the mixing of the longitudinal spin Seebeck effect; and the in-plane temperature gradient and the magnetic field together There will also be other thermomagnetic effects, such as the planar Nernst effect and the Rigi-Leduc effect, which are not conducive to the detection of spin currents.

Method used

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  • Multilayer film heterostructure and its preparation method and application
  • Multilayer film heterostructure and its preparation method and application
  • Multilayer film heterostructure and its preparation method and application

Examples

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Embodiment 1

[0052] This example is used to illustrate the preparation method of the multilayer film heterostructure provided by the present invention.

[0053] The sample was grown on a GGG substrate (3mm×5mm×0.5mm) with 13 μm YIG(Y 3 Fe 5 o 12 ) film, in which YIG is a ferrimagnetic insulator, and then Cu (3nm), CoPt (5nm), IrMn (8nm), SiO 2 (5nm), among which Cu, CoPt, IrMn adopt DC sputtering method, SiO 2 The radio frequency sputtering method adopted, the vacuum degree of the magnetron sputtering equipment is less than 4.0×10 -5 Pa, the working pressure of argon is 0.5Pa.

[0054] The prepared sample GGG / YIG / Cu(3nm) / CoPt(5nm) / IrMn(8nm) / SiO 2 (5nm) is a multilayer heterogeneous structure, such as figure 2 shown.

Embodiment 2-11

[0056] This embodiment is used to illustrate the measurement effect of the longitudinal spin Seebeck effect measurement device provided by the present invention.

[0057] Adopt the preparation method described in embodiment 1 to prepare described sample, all embodiments all adopt GGG substrate (3mm * 5mm * 0.5mm), wherein the material and thickness of each layer are as follows:

[0058]

[0059] The hysteresis loop of embodiment 2 sample GGG / YIG is as Figure 4 shown. The hysteresis loop shows that YIG is an in-plane film and isotropic in the plane. The hysteresis loop of the sample GGG / YIG is measured by a vibrating sample magnetometer, and the in-plane saturation field is about 30Oe.

Embodiment 3

[0060] Example 3 Sample GGG / Cu(3nm) / CoPt(5nm) / IrMn(8nm) / SiO 2 (5nm) hysteresis loop such as Figure 5 shown. Since Cu has a long spin diffusion length and weak spin-orbit coupling, it is an ideal isolation layer to eliminate the ferromagnetic exchange coupling between the ferromagnetic layers YIG and CoPt. Measurement of sample GGG / Cu(3nm) / CoPt(5nm) / IrMn(8nm) / SiO with a vibrating sample magnetometer 2 The hysteresis loop (5nm) shows that the bias field obviously deviates from the zero field, and the left and right coercive forces are far outside the saturation field of the GGG / YIG sample.

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Abstract

The invention provides a multilayer film heterostructure and its preparation method and application; the multilayer film heterostructure can eliminate disturbances from other thermomagnetic effects and isolate ISHE (inverse spin Hall effect), ANE (anomalous Hall effect) and ARL (anomalous Righi-Leduc effect) in a spin current detection layer clearly and effectively, thereby decreasing the reflection of spin current at an interface, and measuring longitudinal spin Seebeck effect at room temperature; the coercive force of a spin current detection layer is not limited, and the material range suitable for practical application is widened.

Description

technical field [0001] The invention belongs to the technical field of spin electronics, and in particular relates to a multilayer film heterogeneous structure, a preparation method thereof and an application in spin current detection. Background technique [0002] The generation, transport and detection of spin currents are hot research topics in spintronics in recent years. Among the current research methods, spin Hall effect, spin Seebeck effect, spin pumping and local spin valve The structure and so on have attracted extensive attention of people in this research field, and the spin Seebeck effect is favored by many researchers for its simple detection mechanism and convenient experimental method. [0003] For the study of the spin Seebeck effect, there are usually two experimental devices: transverse (temperature gradient within the film surface) and longitudinal (temperature gradient perpendicular to the film surface). The samples used for research are generally ferrom...

Claims

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Application Information

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IPC IPC(8): H01L43/00H01L35/28G01T1/29
CPCG01T1/29H10N10/10H10N50/00
Inventor 郑晓丽蔡建旺
Owner INST OF PHYSICS - CHINESE ACAD OF SCI
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