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InGaAs infrared polarization detector based on surface plasma effect

A surface plasmon and infrared polarization technology, which is applied in the fields of light detection and polarization optics, can solve the problems of miniaturization of polarization detectors and other problems, and achieve the effect of compact structure, good polarization characteristics, and reduction of optical path components.

Inactive Publication Date: 2017-05-31
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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Problems solved by technology

[0004] The traditional polarization detection is to add a polarizer in front of the detector, but with the trend of miniaturization of devices and equipment, additional polarizers and polarizer adjustment systems have become obstacles to the miniaturization of polarization detectors

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  • InGaAs infrared polarization detector based on surface plasma effect
  • InGaAs infrared polarization detector based on surface plasma effect
  • InGaAs infrared polarization detector based on surface plasma effect

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Embodiment Construction

[0029] In order to solve the problems of the prior art, the present invention proposes an InGaAs infrared polarization detector based on the surface plasmon effect, which includes a substrate and a lower doped layer, an absorption layer, and an upper doped layer deposited sequentially from bottom to top on the substrate. layer and metal grating layer. The metal grating layer is a two-dimensional periodic sub-wavelength asymmetric structure grating for receiving incident light waves. The so-called two-dimensional periodic sub-wavelength asymmetric structure grating refers to a periodic two-dimensional pattern structure on the metal layer, and the pattern size is of sub-wavelength order (the size is smaller than the incident wavelength), where the asymmetry refers to the X The graph size is different in the axis direction and the Y axis direction. When the wavelength of light incident on the grating and the grating meet the wave vector matching condition, an electron density wa...

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Abstract

The invention discloses an InGaAs infrared polarization detector based on a surface plasma effect. The detector comprises a substrate, a lower doping layer, an absorbing layer, an upper doping layer and a metal grating layer, wherein the lower doping layer, the adsorbing layer, the upper doping layer and the metal grating layer are down-up successively deposited on the substrate. The metal grating layer is a two-dimensional sub-wavelength asymmetrically-structured grating, and used for receiving incident light waves. The absorbing layer is used for absorbing light waves. The upper doping layer and the lower doping layer are used for leading out two electrodes of the infrared polarization detector. According to the invention, by use of the two-dimensional sub-wavelength asymmetrically-structured grating, the detector can be coupled to detected light waves to stimulate the surface plasma effect; through the surface plasma effect, the light filed can be localized in the place near the metal and a semiconductor, so efficiency of the detector can be improved; and the electromagnetic vibration strengths generated under irradiation of the incident light in different polarization directions of the asymmetric grating structure are different, so polarized light detection can be achieved.

Description

technical field [0001] The invention relates to the technical field of light detection and the field of polarization optics, in particular to an InGaAs infrared polarization detector based on the surface plasmon effect. Background technique [0002] The 1-3μm infrared band is an important atmospheric window that is relatively transparent in the air. Infrared detectors working in this band have important applications in many fields such as military and civilian use. In the military, it can be used in night vision, infrared guidance, infrared imaging, radar ranging, etc.; in civilian use, it can be used in optical fiber communication, temperature measurement, weather forecast, geological survey, etc. After years of development, infrared detector materials used in the 1-3μm band have basically formed a pattern in which HgCdTe and InGaAs are the leaders, and GaSb, PtSi and other materials are flourishing. However, compared with HgCdTe, InGaAs is easier to grow quality control a...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/105
CPCH01L31/105
Inventor 韦欣王文博付东胡晓斌李健宋国峰
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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