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Semiconductor device and method for forming same

A semiconductor and device technology, applied in the field of semiconductor devices and their formation, can solve problems such as slow response speed of devices, and achieve the effect of improving response speed

Active Publication Date: 2017-05-31
ZHUZHOU CRRC TIMES SEMICON CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, the IGBT device with this structure has a slow response speed

Method used

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  • Semiconductor device and method for forming same
  • Semiconductor device and method for forming same
  • Semiconductor device and method for forming same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0064] This embodiment provides a semiconductor device, please refer to figure 2 , figure 2 It is a schematic cross-sectional structure diagram of a semiconductor device according to an embodiment of the present invention, including:

[0065] A semiconductor substrate 200, the semiconductor substrate 200 comprising a first surface and a second surface opposite to the first surface, wherein, figure 2 Wherein, the first surface is defined as the upper surface, and the second surface is defined as the lower surface. A drift region 202 of the first conductivity type is included between the first surface and the second surface, a base region 204 of the second conductivity type is included between the drift region 202 and the first surface, and the drift region A collector region 201 of the second conductivity type is included between 202 and the second surface;

[0066] Specifically, in this embodiment, a charge accumulation layer 203 of the first conductivity type is further...

Embodiment 2

[0076] This embodiment provides a semiconductor device, please refer to image 3 , image 3 It is a schematic cross-sectional structure diagram of a semiconductor device according to an embodiment of the present invention.

[0077] In this embodiment, the semiconductor device includes:

[0078] A semiconductor substrate 300, the semiconductor substrate 300 includes a first surface and a second surface opposite to the first surface, in image 3 Wherein, the first surface is the upper surface of the semiconductor substrate, and the second surface is the lower surface of the semiconductor substrate. A drift region 302 of the first conductivity type is included between the first surface and the second surface, a base region 304 of the second conductivity type is included between the drift region and the first surface, and the drift region and A collector region 301 of the second conductivity type is included between the second surfaces;

[0079] Specifically, in this embodimen...

Embodiment 3

[0093] This embodiment provides a method for forming a semiconductor device, such as Figure 4 As shown, it is a flow chart of the method for forming a semiconductor device in this embodiment, including:

[0094] Step 101: Provide a semiconductor substrate, the semiconductor substrate includes a first surface and a second surface opposite to the first surface, and the drift between the first surface and the second surface includes a first conductivity type a region comprising a base region of a second conductivity type between the drift region and the first surface, and a collector region of the second conductivity type between the drift region and the second surface;

[0095] Step 102: forming a plurality of first trenches and second trenches penetrating through the base region on the first surface of the semiconductor substrate;

[0096] Step 103: filling the second trench with a dielectric material;

[0097] Step 104: forming an isolation layer and a gate material in the ...

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Abstract

The invention provides a semiconductor device and a method for forming the same. The semiconductor device and the method have the advantages that second grooves for forming pseudo-grid regions are filled with dielectric materials, grid electrode materials and isolation layers in pseudo-grid structures in the prior art can be replaced, accordingly, the problems of increase of input capacitance of existing semiconductor devices and influence on the response speeds of the existing semiconductor devices due to capacitance formed between the grid electrode materials, the isolation layers and collector electrodes in the pseudo-grid structures in the prior art can be solved, and the response speeds of the semiconductor device can be increased.

Description

technical field [0001] The present application relates to the field of semiconductor technology, in particular to a semiconductor device and a method for forming the same. Background technique [0002] Insulated Gate Bipolar Transistor (IGBT for short) is a composite fully-controlled voltage-driven power semiconductor device composed of a bipolar transistor (BJT) and an insulated gate field effect transistor (MOSFET), and has a MOSFET Due to the high input impedance of the device and the low turn-on voltage drop of the power transistor (ie giant transistor, GTR for short), it is widely used in various fields. [0003] The IGBT device structure in the prior art is as figure 1 As shown, it includes: a semiconductor substrate 100, and the semiconductor substrate 100 is sequentially provided with a collector region 101, a drift region 102, a charge accumulation layer 103, and a base region 104 from bottom to top; wherein, the upper surface of the semiconductor substrate 100 is ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/06H01L21/331H01L29/739
CPCH01L29/0603H01L29/66325H01L29/7393
Inventor 罗海辉刘国友肖海波肖强谭灿健
Owner ZHUZHOU CRRC TIMES SEMICON CO LTD
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