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An OPC Modeling Method for Controlling the False Alarm Rate of Auxiliary Graphic Signals

A technology for auxiliary graphics and modeling methods, which is applied in the field of semiconductor integrated circuit manufacturing and optical proximity effect correction, can solve problems such as wasting computing time and wrong judgments, and achieve the effect of improving work efficiency and saving computing resources

Active Publication Date: 2018-06-22
SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When an AF false alarm occurs during the graphical model verification process, the model fitting operation needs to be performed again before it can be used for layout graphics correction, which wastes a lot of computing time and is easy to give wrong judgments

Method used

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  • An OPC Modeling Method for Controlling the False Alarm Rate of Auxiliary Graphic Signals
  • An OPC Modeling Method for Controlling the False Alarm Rate of Auxiliary Graphic Signals
  • An OPC Modeling Method for Controlling the False Alarm Rate of Auxiliary Graphic Signals

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Embodiment Construction

[0025] Attached below Figure 2-5 Specific embodiments of the present invention will be described in detail. It should be understood that the invention can have various changes in different examples without departing from the scope of the invention, and that the descriptions and illustrations therein are illustrative in nature rather than limiting the invention.

[0026] see figure 2 , figure 2 It is a schematic flow chart of a modeling method for controlling OPC auxiliary graphic signal false alarm rate of the present invention, and it comprises the steps:

[0027] Step S1: Design the test main pattern; wherein, the test main pattern usually includes one-dimensional and two-dimensional standard patterns, and multiple sets of auxiliary patterns are designed to be added around the standard one-dimensional and two-dimensional patterns to comprehensively collect the photolithography process in various Distortion behavior under graphics.

[0028] image 3 It is a schematic ...

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Abstract

An OPC (optical proximity correction) modeling method controlling a false alarm rate of an auxiliary graph signal comprises the steps of designing a main test graph, designing a plurality of groups of auxiliary graphs to be added to the peripheries of a one-dimensional standard graph and a two-dimensional standard graph, collecting on-line line width measurement data of the main test graph and imaging data of the groups of auxiliary graphs, establishing a corresponding document between a layout and the line width measurement data of the main test graph, adding a corresponding point between imaging graphic information and signal monitoring data of the groups of auxiliary graphs, performing model fitting operation, allowing a residual error between a line width value of a model and a measured line width value to be statistically minimum, adding an imaging graphic signal for monitoring the groups of auxiliary graphs in the model fitting operation process, and outputting the model for graph OPC.

Description

technical field [0001] The present invention relates to the technical field of semiconductor integrated circuit manufacturing, in particular to the field of optical proximity correction (OPC for short), and in particular to an OPC modeling method for controlling the false alarm rate of auxiliary graphic signals. Background technique [0002] With the continuous development of integrated circuits and the continuous development of manufacturing technology towards smaller dimensions, the photolithography process has become the main bottleneck restricting the development of integrated circuits to smaller feature sizes. In deep sub-micron semiconductor manufacturing, the size of the key pattern is much smaller than the wavelength of the light source. Due to the diffraction effect of light, the pattern projected on the silicon wafer by the mask will change greatly, such as the change of line width and the corner Various optical proximity effects such as the rounding of the wire an...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/20G06F17/50
CPCG03F7/70441G03F7/70508G06F30/20G06F30/398
Inventor 卢意飞
Owner SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT
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