Device for preparing SiCxOy thin film through high-flux CVD

A silicon-carbon-oxygen, high-throughput technology, applied in gaseous chemical plating, metal material coating process, coating, etc., can solve problems such as heavy workload and low work efficiency

Active Publication Date: 2017-05-31
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Abstract
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Problems solved by technology

[0004] However, the conventional CVD method is used to study the material, ratio and SiC of the reaction precursor. x o y The relationship between the composition ratio of the film, the workload is very large, and the work efficiency is relatively low

Method used

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  • Device for preparing SiCxOy thin film through high-flux CVD
  • Device for preparing SiCxOy thin film through high-flux CVD
  • Device for preparing SiCxOy thin film through high-flux CVD

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Embodiment Construction

[0035] The present invention will be further described in detail below with reference to the accompanying drawings.

[0036] Fused silica glass is used as the substrate substrate for deposition, mainly because silicon carbide generally requires a higher deposition temperature during the deposition process, and the softening temperature of fused silica can reach above 1000°C, so it is SiC x o y The ideal substrate for thin film material deposition, as an option, flat glass can also be used as the substrate substrate.

[0037] Reactive gas (O 2 , C 2 h 4 , SiH 4 ) and carrier gas (N 2 ) using 99.999% high-purity gas. At the same time, in order to ensure the quality of the CVD deposited coating, it is necessary to ensure an excellent airtightness between the entire gas delivery system and the atmosphere.

[0038] Such as figure 2 As shown, it is a cross-sectional view of the CVD deposition reaction chamber, 5 is a high-frequency induction coil, and its material is a copp...

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Abstract

The invention belongs to the field of film coating device development and particularly relate to a device for preparing a SiCxOy thin film through high-flux CVD. According to the device for preparing the SiCxOy thin film through high-flux CVD, a CVD deposition reaction chamber structure is designed on the basis of a high-flux CVD film coating technology, through different reaction precursor gases (SiH4, C2H4 and O2), N2 serves as a carrier gas, flow direction distribution of the gases in a reaction chamber is controlled, and gradient change of the concentration proportion of reaction precursors is formed, so that a SiCxOy thin film combined material with material component changing is formed on underlayer substrate.

Description

technical field [0001] The invention belongs to the field of coating equipment development, and mainly applies high-throughput chemical vapor deposition (CVD) coating technology to the preparation of silicon-carbon-oxygen thin films, and realizes silicon-carbon-oxygen thin films with different compositions on the same substrate during a single coating process High-throughput preparation of materials, specifically a device for preparing silicon-carbon-oxygen thin films by high-throughput CVD. Background technique [0002] Silicon Carbon Oxygen (SiC x o y ) thin-film material with silicon carbide (SiC) and silicon dioxide (SiO 2 ) similar characteristics, good thermal stability, good mechanical strength, wide band gap, excellent optical properties. These excellent characteristics make silicon carbon oxide (SiC x o y ) thin film material has excellent industrial application value in the field of electronics and optics. For example, Pilkington's K series low-e glass produc...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/30C23C16/455
CPCC23C16/30C23C16/455
Inventor 彭先德向勇
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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