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sio2@ag ​​core-shell structure composite conductive particles and preparation method thereof

A technology of conductive particles, core-shell structure, applied in metal processing equipment, liquid chemical plating, transportation and packaging, etc.

Active Publication Date: 2019-01-11
SHENZHEN INST OF ADVANCED ELECTRONICS MATERIALS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, nano-powder materials have a large specific surface area, high surface activity, are prone to agglomeration, and are difficult to disperse, which seriously affects the role of nano-silver and its application in conductive adhesives.

Method used

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  • sio2@ag ​​core-shell structure composite conductive particles and preparation method thereof
  • sio2@ag ​​core-shell structure composite conductive particles and preparation method thereof
  • sio2@ag ​​core-shell structure composite conductive particles and preparation method thereof

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preparation example Construction

[0028] see figure 1 , an embodiment of Ag@SiO 2 A preparation method for composite conductive particles with a core-shell structure, comprising the steps of:

[0029] S110, SiO 2 Disperse in absolute ethanol and sonicate for 10-60 minutes, then add sensitizing solution, react at room temperature for 10-120 minutes, then centrifuge and wash to obtain sensitized SiO 2 .

[0030] In one embodiment, SiO 2 The particle size of SiO is between 10nm and 100μm, and the content of hydroxyl groups on its surface is between 0.2% and 8%. Preferably, SiO 2 The particle size is between 400nm and 10μm, and the surface hydroxyl content is between 1.5 and 4%.

[0031] In one embodiment, the sensitizing solution is selected from at least one of γ-aminopropyltriethoxysilane, γ-mercaptopropyltrimethoxysilane, mercaptoacetic acid, and stannous chloride, wherein the sensitizing solution The concentration is 0.01-10.0mol / L, the sensitizer and SiO 2 The mass ratio is 1:10~1:3.

[0032] In one ...

Embodiment 1

[0046] 1. Weigh 5.0g of 10μm SiO 2 , dissolved in 50ml of absolute ethanol, ultrasonic 10min.

[0047] 2. Prepare sensitizing solution: weigh 0.25g stannous chloride dihydrate, dissolve in 2ml concentrated hydrochloric acid, add water and dilute to 50ml.

[0048] 3. The above SiO 2 Mix with the sensitizing solution, and mechanically stir at 40°C for 20 minutes. Wash by centrifugation several times.

[0049] 4. Preparation of activation solution: weigh 0.3g of silver nitrate and dissolve in 50ml of deionized water. Add concentrated ammonia water dropwise to the silver nitrate solution, brown precipitate will start to form, continue to add concentrated ammonia water dropwise until the solution becomes clear.

[0050] 5. Place the sensitized silicon dioxide in the above activation solution, and stir mechanically at room temperature for 30 minutes. Wash by centrifugation several times.

[0051] 6. Preparation of silver plating solution: weigh 0.5g of silver nitrate and disso...

Embodiment 2

[0055] 1. Weigh 5.0g of 2μm SiO2 2 , dissolved in 50ml of absolute ethanol, ultrasonic 20min.

[0056] 2. Preparation of sensitization solution: Weigh 0.25g of γ-aminopropyltriethoxysilane, dissolve in 2ml of concentrated hydrochloric acid, and dilute to 50ml with water.

[0057] 3. The above SiO 2 Mix with the sensitizing solution, and mechanically stir at 40°C for 20 minutes. Wash by centrifugation several times.

[0058] 4. Preparation of activation solution: weigh 0.3g of silver nitrate and dissolve in 50ml of deionized water. Add concentrated ammonia water dropwise to the silver nitrate solution, brown precipitate will start to form, continue to add concentrated ammonia water dropwise until the solution becomes clear.

[0059] 5. Dissolve the sensitized silicon dioxide in the above activation solution, and stir mechanically at room temperature for 30 minutes. Wash by centrifugation several times.

[0060] 6. Preparation of silver plating solution: Weigh 0.60g of sil...

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Abstract

A method for preparing SiO2@Ag core-shell composite conductive particles, comprising: dispersing SiO2 into absolute ethanol and ultrasonicating for 10 to 60 minutes, then adding a sensitizing solution, reacting at room temperature for 10 to 120 minutes, and then centrifuging and washing. Obtain the sensitized SiO2; disperse the sensitized SiO2 in deionized water and sonicate for 10-60 minutes, then place it in the activation solution [Ag(NH3)2]OH·XH2O solution for activation, and react at room temperature for 10-90 minutes , and then centrifuged to obtain silica particles containing nano-silver seeds on the surface; disperse the silica particles in the silver plating solution, raise the temperature to 25-80°C, then add the reducing solution dropwise, and continue the reaction for 60-300 minutes. After centrifugation, washing and vacuum drying, SiO2@Ag core-shell structure composite conductive particles were obtained. The above-mentioned composite conductive particles have high conductivity and low production cost.

Description

technical field [0001] The invention relates to the technical field of electronic packaging materials, in particular to a SiO 2 @Ag core-shell structure composite conductive particles and its preparation method. Background technique [0002] As a substitute for traditional Sn / Pb solder, conductive adhesive has the advantages of low curing temperature, simple process, and environmental protection, so it is more and more used in surface packaging and chip interconnection. However, conductive adhesives also have defects such as low volume resistivity and high cost in practical applications, which seriously restrict their application in the field of electronic packaging. Therefore, the preparation of conductive adhesives with high conductivity and low cost is becoming more and more popular. The focus of the research. [0003] As a conductive filler, nano-silver can be sintered at low temperature due to the nano-size effect, thereby significantly reducing the number of contact ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B22F1/02B22F9/24C23C18/44C23C18/18B82Y40/00
CPCC23C18/1893C23C18/44B82Y40/00B22F9/24B22F1/17
Inventor 孙蓉张保坦李金泽朱朋莉赵涛
Owner SHENZHEN INST OF ADVANCED ELECTRONICS MATERIALS
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