Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Etching solution composition and metal film etching method using same

A technology of composition and etching solution, applied in the field of etching solution, can solve problems such as slow etching speed, loss of critical dimensions, environmental pollution, etc.

Inactive Publication Date: 2017-05-10
TCL CHINA STAR OPTOELECTRONICS TECH CO LTD
View PDF6 Cites 37 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Because molybdenum is not easy to be etched by general etching solution, or the etching speed is slow, there are often molybdenum residues when etching is completed. Prolonging the etching time to avoid molybdenum residues will lead to greater critical dimension loss (CD- Loss, critical dimension-loss, that is, the difference between the border of the PR photoresist and the border of the metal film)
In the prior art, etchant containing fluorine is often used to improve the etching effect on metal molybdenum, but the etchant containing fluorine will increase the cost of waste liquid treatment and cause pollution to the environment
In addition, the existing etching solution is also prone to produce unsuitable cone angles, that is, poor etching. If the cone angle is too large, it will cause the next layer of film to break when it is deposited. If the cone angle is too small, the cone angle will expand and contract easily.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Etching solution composition and metal film etching method using same
  • Etching solution composition and metal film etching method using same
  • Etching solution composition and metal film etching method using same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0043] Etching solution composition A, with the total weight of the composition being 100%, comprises the following components:

[0044] 10% by weight of hydrogen peroxide, 0.1% by weight of 6-hydroxyquinoline, 1% by weight of IDA (iminodiacetic acid), 5% by weight of ethylenediaminetetraacetic acid, 0.375% by weight of H 3 PO 4 , 5% by weight of ET (ethanol), the balance being water.

[0045] Taking the copper-molybdenum metal film (copper is the upper metal film, and molybdenum is the lower metal film) as the etching object, the etching test is carried out using the etching solution composition A. After etching with an etchant, the PR glue was peeled off to obtain the desired pattern after etching; the experimental data are shown in Table 1.

[0046] Such as figure 1 and figure 2 As shown, after the etching test is completed, the CD-loss of the copper-molybdenum metal film is 883nm, the etched edge of the metal film has a cone angle of 65.07 degrees, the thickness of th...

Embodiment 2

[0048] Etching solution composition B, with the total weight of the composition being 100%, comprises the following components:

[0049] 10 wt% hydrogen peroxide, 0.1 wt% 6-hydroxyquinoline, 1 wt% IDA, 0.375 wt% H 3 PO 4 And 0.75% by weight of HAc (acetic acid), 10% by weight of ET, the balance is water.

[0050] The etching test was carried out in the same manner as in Example 1 using etching solution composition B, and the test data are shown in Table 1.

Embodiment 3

[0052] Etching solution composition C, based on the total weight of the composition as 100%, comprises the following components:

[0053] 10 wt% hydrogen peroxide, 0.05 wt% 6-hydroxyquinoline, 1 wt% IDA, 0.375 wt% H 2 SO 4 and 0.75% by weight of HAc, 5% by weight of ET, the balance being water.

[0054] The etching test was carried out in the same manner as in Example 1 using etching solution composition C, and the test data are shown in Table 1.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention relates to an etching solution composition, prepared from the following components: 4-25wt% of hydrogen peroxide, 0.01-10wt% of an etching inhibitor, 0.01-10wt% of a chelating agent, 0.01-3wt% of etching additives, 0.01-10wt% of a hydrogen peroxide stabilizer and the balance of water, wherein the total weight of the composition is 100%. The invention also provides a conductive metal film etching method. The method comprises the step of enabling the etching solution composition to be contacted with a conductive metal film, wherein an upper layer metal film is formed by at least one of aluminum, aluminum alloy, copper and copper alloy, and a lower layer metal film is formed by molybdenum and / or titanium.

Description

technical field [0001] The invention relates to the field of etching solution, in particular to an etching solution composition and an etching method using the composition. Background technique [0002] A liquid crystal display device (LCD, Liquid Crystal Display) includes a liquid crystal display panel and a backlight module. Generally, a liquid crystal display panel includes a CF (Color Filter) substrate, a TFT (Thin Film Transistor) array substrate, and a liquid crystal (Liquid Crystal) disposed between the CF substrate and the TFT array substrate. By supplying power to the TFT array substrate or not, the liquid crystal molecules are controlled to change direction, and the light from the backlight module is projected onto the CF substrate to generate a picture. [0003] When manufacturing microcircuits such as TFT-LCD, uniformly apply photoresist by forming conductive metal films such as aluminum, aluminum alloy, copper and copper alloys or insulating films such as silic...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C23F1/16
CPCC23F1/16
Inventor 李嘉
Owner TCL CHINA STAR OPTOELECTRONICS TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com