A method of preparing large-area high-quality completely single-layered tungsten disulfide

Abstract

The invention relates to the field of tungsten disulfide, and particularly relates to a method of preparing large-area high-quality completely single-layered tungsten disulfide. A chemical vapor deposition technique is adopted. Gold the tungsten solubility of which is extremely low is adopted as a growth substrate, and a tungsten source and a sulfur source under atmospheric pressure at high temperature are subjected to a catalytic reaction on the surface of the gold substrate to grow, in a self-limiting manner, completely single-layered tungsten disulfide large-size monocrystalline and large-area continuous film. The characteristic that bonding between the prepared tungsten disulfide and the gold substrate under atmospheric pressure is weak is utilized, a bubbling transferring process and a process combining bubbling and reel-to-reel transferring are respectively adopted to transfer the large-area completely single-layered tungsten disulfide to rigid and flexible substrates under the premise of not destroying the gold substrate. The completely single-layered high-quality millimeter-level tungsten disulfide monocrystalline and large-area continuous film can be prepared through the method, thus laying foundations for application of single-layered tungsten disulfide in the fields of electron / optoelectronic devices, spinning devices, solar cells, gas / light sensors, flexible film electronic / optoelectronic devices, and the like.

Description

[0001] Technical field: [0002] The invention relates to a new single-layer tungsten disulfide material and its chemical vapor deposition (CVD) preparation technology, specifically a method for preparing large-area, high-quality and complete single-layer tungsten disulfide, which is suitable for large-area and complete single-layer tungsten disulfide Low-cost mass production of tungsten single crystals and continuous thin films. [0003] Background technique: [0004] Since graphene was isolated for the first time by the research institute of the University of Manchester in 2004, graphene has been widely used in multifunctional nanoelectronic devices, transparent conductive films, composite materials, catalytic materials, energy storage materials, Field emission materials, gas sensors and gas storage have been extensively researched and applied. However, graphene is a zero-bandgap two-dimensional material and cannot be used as the channel layer of transistors, which limits it...

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Problems solved by technology

However, the substrates used in these preparation methods are inert materials, such as silicon dioxide, aluminum oxide, etc., which are not the process of surface catalytic growth, so the number and size of the single-layer tungsten disulfide obtained are poorly controlled, and there are many problems. Growth defects, resulting in electrical properties far inferior to those of samples prepared by micromechanical exfoliation

On the other hand, these inert substrates are hard, brittle atomic crystals that cannot be transferred to polyethylene terephthalate using low-cost roll-to-roll transfer methods like graphene grown on platinum foil (application number: 201410376865.8). Alcohol ester (PET), polyethylene naphthalate (PEN) and other flexible substrates; and during the transfer process, it is necessary to use strong alkali or strong acid to corrode these inert substrates, which will easily cause environmental pollution and waste of substrate materials. high cost

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