Preparation method of tubular rotating high-purity silicon sputtering target

Abstract

The invention discloses a preparation method of a tubular rotating high-purity silicon sputtering target with high purity, high density, low oxygen content and low resistivity. The preparation method comprises the following steps: preparation of a target base tube: the target base tube with a needed model number is selected and checked; surface pretreatment of the base tube: the target base tube is fed in a base tube pretreatment equipment for sand blasting roughening and spraying of a backing binding layer to obtain the target base tube to be sprayed; preparation of silicon powder raw materials: silicon powder with the content of 99.95-99.99%, the oxygen content of not more than 1500 ppm and the particle size of 45-150 microns is weighed; drying: the obtained silicon powder raw materials are put in a drying furnace for drying; and vacuum plasma spraying: the target base tube is put in a sealed spraying bin; a high-power supersonic plasma spraying gun is adopted; plasma is used as a heat source for heating the obtained silicon powder as a molten or half-molten state; and the silicon powder is sprayed to the surface of the prepared target base tube along with high-speed flame flow to form a compact silicon coating layer.

Description

technical field [0001] The invention relates to the field of sputtering coating materials, in particular to a method for preparing a tubular rotating high-purity silicon sputtering target. Background technique [0002] Since the silicon material has the characteristics of good superhardness, wear resistance, corrosion resistance and good sealing, the silicon target has been used as an indispensable sealing and grating coating material in the sputtering coating process. It is used in photoelectric glass, energy-saving glass, Superhard wear-resistant tools and other fields have been widely used. Due to the limitation of production technology, the silicon target material produced by thermal spraying process on the market has the defects of insufficient relative density (≤95%), many pores, and high oxygen content. During the sputtering process, due to the high oxygen content, the conductivity of the target material deteriorates, which affects the discharge ignition, and the spu...

AI Technical Summary

Problems solved by technology

Due to the limitation of production technology, the silicon target material produced by thermal spraying process on the market has the defects of insufficient relative density (≤95%), many pores, and high oxygen content.

During the sputtering process, due to the high oxygen content, the conductivity of the target material deteriorates, which affects the discharge ignition, and the sputtering effect is not good. At the same time, due to the high oxygen content, the oxygen in the target material is released to the sputtering process during the sputtering process In the vacuum chamber of the injection chamber, the oxygen concentration in the vacuum chamber becomes higher, and the target molecules sputtered out to be filmed are oxidized, which affects the quality of the film.