Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Terahertz frequency synthesizer realized by adopting CMOS process

A frequency synthesizer and terahertz technology, applied in the field of terahertz frequency synthesizers, can solve the problems of increasing the operating frequency of the device and reducing the size of the device, and achieve the effects of improved size, high integration and easy mass production

Inactive Publication Date: 2017-03-22
TIANJIN UNIV
View PDF5 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The reason why the traditional digital CMOS process technology has not been fully considered in the application of ultra-high frequency circuits (frequency exceeding 100GHz) is that the CMOS oscillator circuit is limited by the cutoff frequency of the device (f T ) and maximum oscillation frequency (f max )limits
However, with the development of process technology, the size of the device is continuously reduced, and the operating frequency of the device is continuously increased, so that the cut-off frequency of the field effect transistor can be close to or even reach the frequency range of terahertz under the CMOS process, so that the CMOS process can be used to realize the frequency range of the terahertz wave. It is possible to operate the circuit under
[0005] The terahertz wave circuit realized by CMOS process has been studied, but because the CMOS process device

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Terahertz frequency synthesizer realized by adopting CMOS process
  • Terahertz frequency synthesizer realized by adopting CMOS process
  • Terahertz frequency synthesizer realized by adopting CMOS process

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0020] A terahertz frequency synthesizer implemented by a CMOS process of the present invention will be described in detail below with reference to the embodiments and the accompanying drawings.

[0021] A terahertz frequency synthesizer implemented by a CMOS process of the present invention is composed of a terahertz voltage-controlled oscillator, ILFDs and a frequency divider chain. Among them, the voltage-controlled oscillator is used to obtain the output signal satisfying the terahertz frequency; the subsequent ILFDs (injection locking frequency dividers) and frequency divider chain adjust the signal to the appropriate frequency. Its rear end is locked independently by a phase-locked loop in frequency and phase.

[0022] Due to the limitation of the cut-off frequency and the maximum oscillation frequency of the CMOS process, it is determined that the performance of active devices is greatly deteriorated or cannot work normally at frequencies close to or exceeding the cut-o...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a terahertz frequency synthesizer realized by adopting a CMOS process, which comprises a voltage controlled oscillator generating terahertz LO signals, a first-stage injection-locked frequency divider and a second-stage injection-locked frequency divider for frequency division, and a phase-locked loop for locking a reached set frequency, wherein the voltage controlled oscillator, the first-stage injection-locked frequency divider, the second-stage injection-locked frequency divider and the phase-locked loop are in serial connection sequentially; and the feedback output end of the phase-locked loop is connected with the feedback input end of the voltage controlled oscillator. According to the terahertz frequency synthesizer realized by adopting the CMOS process disclosed by the invention, the standard CMOS process is adopted for realization, the integration is high, the cost is low, mass production is facilitated, the limitation of poor working performance near a cutoff frequency of the CMOS process is overcome, and the design of the terahertz frequency synthesizer is realized.

Description

technical field [0001] The invention relates to a terahertz frequency synthesizer. In particular, it relates to a terahertz frequency synthesizer realized by CMOS technology. Background technique [0002] In recent years, high-speed wireless communication systems are constantly developing towards higher frequency, bandwidth, higher integration and lower cost. The terahertz frequency band (300GHz-3THz) is between microwaves and infrared rays. It is the only last spectrum interval in the electromagnetic spectrum that has not been fully studied and well utilized. Today, when communication frequency bands are increasingly scarce, the use of terahertz wave communication Technical research is of great significance. Terahertz wave communication technology is widely used in all aspects of life. Due to its unique properties and position in the spectrum, terahertz waves are widely used in communications, electronic countermeasures, radar, electromagnetic weapons, astronomy, medical ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H03L7/18
CPCH03L7/18
Inventor 毛陆虹王阳谢生肖谧
Owner TIANJIN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products