Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Znse/iii-v family/znsexs1-x or znse/iii-v family/znse/zns quantum dot and preparation method thereof

A III-V, quantum dot technology, used in chemical instruments and methods, nanotechnology for materials and surface science, luminescent materials, etc.

Active Publication Date: 2019-04-30
NANJING TECH CORP LTD
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But there is still a certain distance from industrial application

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Znse/iii-v family/znsexs1-x or znse/iii-v family/znse/zns quantum dot and preparation method thereof
  • Znse/iii-v family/znsexs1-x or znse/iii-v family/znse/zns quantum dot and preparation method thereof
  • Znse/iii-v family/znsexs1-x or znse/iii-v family/znse/zns quantum dot and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0025] According to a typical embodiment of the present invention, there is provided a ZnSe / III-V group / ZnSe x S 1-x Or the preparation method of ZnSe / III-V group / ZnSe / ZnS quantum dots. The preparation method includes the following steps: the preparation method includes the following steps: S1, prepare a first mixed solution containing ZnSe nuclei and a non-coordinating solvent, and the temperature of the first mixed solution is ≤150°C; S2, add III to the first mixed solution Group element precursor solution to form the second mixed solution, heat up to 180-320°C, preferably 220-300°C, add group V element precursor solution to react, group III elements and group V elements are coated on the ZnSe core to form III- V group element shell layer, forming the third mixed liquid containing ZnSe / III-V group quantum dots; S3, coating ZnSe x S 1-x Or ZnSe / ZnS shell, get ZnSe / III-V group / ZnSe x S 1-x Or ZnSe / III-V group / ZnSe / ZnS quantum dots, where 0≤x≤1. The key of the present inv...

Embodiment approach

[0028] According to a typical implementation of the present invention, S3 specifically includes: adding a Zn precursor to the third mixed liquid containing ZnSe / III-V quantum dots, then heating to 180-320°C, adding Se and S mixed precursors solution, the synthesized ZnS is coated on the surface of the shell of III-V elements to obtain ZnSe / III-V / ZnSe x S 1-x Quantum dots; or add a Zn precursor to the third mixed solution containing ZnSe / III-V quantum dots, and then heat to 180-320°C, preferably 220-300°C, after adding the Se precursor solution and reacting completely, ZnSe is formed / III-V group / ZnSe, and then add the S precursor solution, and react for a certain period of time to obtain ZnSe / III-V group / ZnSe / ZnS quantum dots.

[0029] Preferably, the S precursor is one or more selected from the group consisting of sulfur-tributylphosphine, sulfur-trioctylphosphine, sulfur-octadecene and hexamethyldisilathane.

[0030] According to a typical embodiment of the present inventi...

Embodiment 1

[0038] Weigh 0.2mmol of zinc stearate and 6g of ODE into a three-necked bottle, exhaust in an inert gas for 10min, raise the temperature to 250°C, inject 0.1mmol of Se-ODE solution, and react for 20min to obtain ZnSe nuclei;

[0039] Cool down to 100°C and add 0.1mmol In(Ac) 3 Solid, warm up to 270°C and inject 0.1mmol TMSP and 0.1ml oleylamine, react for 10min;

[0040] Cool down to 100°C, add 0.5mmol zinc stearate, exhaust for 10 minutes, heat up to 270°C, inject TBP solution containing 0.06mmol Se and 0.24mmol S; cool down to 100°C.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
full width at half maximumaaaaaaaaaa
full width at half maximumaaaaaaaaaa
Login to View More

Abstract

The invention discloses a ZnSe / group III-V / ZnSexS1-x or ZnSe / group III-V / ZnSe / ZnS quantum dot and a preparation method thereof. The preparation method includes the steps of S1, preparing first mixed liquid containing a ZnSe nucleus and a non-coordinating solvent; S2, adding a group-III element precursor solution into the first mixed liquid to form second mixed liquid, increasing the temperature to 180-320 DEG C, and adding a group-V element precursor solution to react; S3, coating a ZnSexS1-x or ZnSe / ZnS shell so as to obtain the ZnSe / group III-V / ZnSexS1-x or ZnSe / group III-V / ZnSe / ZnS quantum dot. The preparation method has the advantages that the group-III element precursor solution is added at a low temperature, the group-V element precursor solution is added at a high temperature, and accordingly group III-V self-nucleation is avoided and the group III-V element shell can coat the ZnSe nucleus perfectly.

Description

technical field [0001] The invention relates to the technical field of material preparation, in particular to a ZnSe / III-V group / ZnSe x S 1-x Or ZnSe / III-V group / ZnSe / ZnS quantum dot and preparation method thereof. Background technique [0002] At present, the emission spectrum of cadmium selenide quantum dots composed of II-VI group elements is continuously adjustable in the visible light range. The size distribution of the prepared quantum dots is uniform, and the half-width of the spectrum is narrow. After chemical transformation, it exhibits high quantum yield and stability, and has received extensive research and attention. However, the heavy metal cadmium (Cd) is used in cadmium selenide quantum dots, which has certain toxicity and pollution to the human body and the natural environment, which limits its application. Therefore, the synthesis and development of cadmium-free and low-cadmium quantum dots emit light Materials have great practical significance. [0003]...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C09K11/02C09K11/88B82Y20/00B82Y30/00B82Y40/00
CPCB82Y20/00B82Y30/00B82Y40/00C09K11/02C09K11/883
Inventor 谢松均汪均涂丽眉高静
Owner NANJING TECH CORP LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com