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Single-crystal thermal field gradient additional adjustment system

An additional adjustment and thermal field technology, applied in the direction of single crystal growth, single crystal growth, crystal growth, etc., can solve the problem of inability to effectively use the thermal field cooling system and ensure the quality of single crystals, and achieve low cost and improved quality. Effect

Pending Publication Date: 2017-02-22
保山新澳泰能源有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In order to adapt to the market, the industry has made one or all of the changes in the material above the liquid level of the Czochralski single crystal thermal field, such as water-cooled heat shields, water-cooled jackets, retaining rings, and inner guide tubes; but it is unavoidable that in the Above the draft tube (including the water-cooled heat shield), there is a region with a sharp change in the thermal field gradient, and the thermal history of the crystal between 700-1100°C cannot be in an ideal state to ensure the quality of the single crystal; at 400-700°C In between, the thermal field cooling system cannot be effectively used, resulting in a large amount of oxygen donors that could have been avoided, affecting production

Method used

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  • Single-crystal thermal field gradient additional adjustment system

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Embodiment Construction

[0013] Preferred embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0014] figure 1 Show the specific embodiment of the present invention: a single crystal thermal field gradient additional adjustment system, the system is set at the upper cover plate 1 of the single crystal furnace, and is set around the inner guide tube 2, the system consists of a plurality of ring-shaped parts Composition, including the first part 3, the second part 4, the third part 5, the fourth part 6 and the fifth part 7, the first part 3, the second part 4 and the third part 5 are arranged in sequence from top to bottom to adjust Temperature part 8, temperature regulation part 8 is 160-180 ° angle with respect to inner guide tube 2, the outer side of temperature regulation part 8 is provided with heat preservation part 9, heat preservation part 9 is formed from the inside by fourth part 6 and fifth part 7 It is superimposed on the ou...

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Abstract

The invention discloses a single-crystal thermal field gradient additional adjustment system which is arranged on an upper cover plate of a single crystal furnace and is arranged in a manner of surrounding an inner flow guide barrel, and consists of a plurality of annular components including a first component, a second component, a third component, a fourth component and a fifth component; the first component, the second component and the third component are set to be temperature adjustment parts in sequence from top to bottom; the temperature adjustment parts form an included angle of 160 to 180 degrees relative to the inner flow guide barrel; a heat insulation part is arranged on the outer side of each temperature adjustment part; the heat insulation parts are formed by stacking fourth components and fifth components in the horizontal direction from inside to outside; the adjustment of the adaptability to the gradient of a thermal field at the upper part of the single-crystal thermal field guarantees smooth transition of the gradient of the thermal field and enables a required temperature region of a crystal rod to be in a proper temperature gradient so as to control the crystal rod to be at a cooling speed of the certain temperature region; meanwhile, the single-crystal thermal field gradient additional adjustment system can rectify gas.

Description

technical field [0001] The invention relates to the technical field of photovoltaic silicon single crystal growth, in particular to a single crystal thermal field gradient additional adjustment system. Background technique [0002] As the photovoltaic industry changes, the quality of silicon single crystal growth becomes more and more important. In order to adapt to the market, the industry has made one or all of the changes in the material above the liquid level of the Czochralski single crystal thermal field, such as water-cooled heat shields, water-cooled jackets, retaining rings, and inner guide tubes; but it is unavoidable that in the Above the draft tube (including the water-cooled heat shield), there is a region with a sharp change in the thermal field gradient, and the thermal history of the crystal between 700-1100°C cannot be in an ideal state to ensure the quality of the single crystal; at 400-700°C In between, the thermal field cooling system cannot be effective...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B15/20C30B29/06
CPCC30B15/206C30B29/06
Inventor 卜庆宝
Owner 保山新澳泰能源有限公司
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