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thz single photon detector based on graphene quantum dots and its preparation method

A technology of graphene quantum dots and single photon detectors, which can be used in the manufacture of instruments, semiconductor devices, and final products, and can solve problems such as difficult processes and low sensitivity

Inactive Publication Date: 2017-10-13
NAT UNIV OF DEFENSE TECH
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

[0007] The purpose of the present invention is to propose a THz single-photon detector based on graphene quantum dots and a preparation method thereof, to overcome the problems of large process difficulty and low sensitivity in the existing preparation methods

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Embodiment Construction

[0046]Referring to accompanying drawing, a kind of THz single photon detector based on graphene quantum dots of the present invention adopts the basic structure that graphene single quantum dots or series graphene double quantum dots are coupled with nano-strip graphene electrometer; The basic structure is specifically: the silicon substrate, the source, the drain, the side gate, the back gate, the Coulomb island, the electrometer and the protective layer are the basic components, and the source, the drain, the side gate, the Coulomb The island and the electrometer are integrated and arranged on the silicon dioxide substrate formed on the surface of the silicon substrate, and the back gate is arranged on the silicon substrate of the silicon substrate, where graphene single quantum dots or graphene double quantum dots in series are used as The Coulomb island of the THz single photon detector, the Coulomb island is located between the source, the drain and the side gate, and a gr...

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Abstract

The invention provides a THz single photon detector based on graphene quantum dots and a preparation method thereof. A basic structure with graphene single-quantum dots or the mutual coupling of graphene dual-quantum dots in a series connection and a nanoribbon graphene electrometer is employed, with a silicon substrate, a source electrode, a drain electrode, a side gate, a back gate, a Coulomb island, an electrometer and a protective layer as basic composition units, the source electrode, the drain electrode, the side gate, the Coulomb island and the electrometer are arranged in an integrated way on a silicon dioxide base formed at the surface of the silicon substrate, and the back gate is arranged on the silicon base of the silicon substrate, wherein the graphene single-quantum dots or graphene dual-quantum dots in a series connection are taken as the Coulomb island of the THz single photon detector, the Coulomb island is between the source and drain electrodes and the side gate, and a graphene nanoribbon is integrated near the Coulomb island as the graphene electrometer. The Coulomb island and the source and drain electrodes are coupled in the form of a tunnel junction, and the Coulomb island, the side gate, the back gate and the graphene electrometer are coupled in the form of capacitance. According to the THz single photon detector and the preparation method, the problems of large technical difficulty and low sensitivity in a present preparation method are overcome.

Description

technical field [0001] The invention relates to the technical field of nanoelectronic devices, in particular to a THz single-photon detector based on graphene single quantum dots or series graphene double quantum dots coupled with a nanostrip graphene electrometer and a preparation method thereof. Background technique [0002] Terahertz wave is an electromagnetic wave with a frequency of 0.3-30 THz (wavelength about 10 μm-1 mm, photon energy about 1.2-120 meV), which is between infrared waves and millimeter waves, and is an important band in the electromagnetic spectrum. There are a large number of organic molecular rotations and vibrational transitions in the terahertz band, and the phonon vibration energy level of semiconductor materials is also in this frequency range, which can be used for material fingerprint identification and structural characterization; the photon energy in this band is low and will not destroy the detected substance. Human body and biological tissue...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/113H01L31/18G01J11/00
CPCG01J11/00H01L31/1136H01L31/1804Y02P70/50
Inventor 方靖岳乔帅王飞张学骜秦华常胜利秦石乔
Owner NAT UNIV OF DEFENSE TECH
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