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Uncooled infrared focal planedetector pixel and preparation method thereof

A focal plane detector and uncooled infrared technology, which is applied in the direction of electrical components, electric solid devices, semiconductor devices, etc., can solve the problem of limited resonant cavity height, limited infrared wavelength range, and inability to meet the pixel requirements of high absorption rate detectors, etc. problem, achieve the effect of improving absorption rate and preventing breakage or warping

Active Publication Date: 2017-01-04
YANTAI RAYTRON TECH
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Problems solved by technology

However, as the pixel size shrinks, this structure will not be able to meet the needs of high-absorption detector pixels
In addition, due to the limited height of the resonant cavity of this structure, the range of infrared wavelengths that can be detected is limited, mainly concentrated in the range of 8-14 μm

Method used

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  • Uncooled infrared focal planedetector pixel and preparation method thereof
  • Uncooled infrared focal planedetector pixel and preparation method thereof
  • Uncooled infrared focal planedetector pixel and preparation method thereof

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Embodiment Construction

[0072] The principles and features of the present invention are described below in conjunction with the accompanying drawings, and the examples given are only used to explain the present invention, and are not intended to limit the scope of the present invention.

[0073] A method for preparing an uncooled infrared focal plane detector pixel, comprising the steps of:

[0074] Step 1: If figure 1 As shown, a semiconductor substrate 1 comprising a readout circuit (not shown) is provided, a metal layer is deposited on the semiconductor substrate 1; and the metal layer is patterned to form a metal reflective layer 2 pattern and a metal electrode Block 3, the thickness of the metal reflective layer 2 is 0.05-0.40 μm; the metal electrode block 3 is electrically connected to the readout circuit on the semiconductor substrate 1; an insulating dielectric layer 4 is deposited on the patterned metal layer, and the insulating dielectric layer 4 is Silicon nitride film or SiO with a stres...

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Abstract

The invention discloses an uncooled infrared focal planedetector pixel and a preparation method thereof, and belongs to the technical field of uncooled infrared focal planedetectors. The uncooled infrared focal planedetector pixel sequentially comprises three layers of structures from a semiconductor substrate to the top; the bridge leg structure on the first layer comprises a metal reflection layer, an insulation dielectric layer, a first support layer, a first support layer protection layer, a first metal electrode layer and a first silicon nitridedielectric layer; the thermal conversion structure on the second layer comprises a second support layer, a second support layer protection layer, a thermosensitive layer, a thermosensitive layer protection layer, a second metal electrode layer and a second silicon nitridedielectric layer; the absorption layer structure on the third layer comprises a third support layer, an absorption layer and an absorption layer protection layer. The invention further discloses the preparation method of the novel uncooled infrared focal planedetector pixel. According to the uncooled infrared focal planedetector pixel,absorptivity of infrared radiation can be significantly increased, responsivity of a detector is increased, and a foundation is laid for manufacturing detectors which are larger in array and smaller in pixel.

Description

technical field [0001] The invention relates to an uncooled infrared focal plane detector pixel and a preparation method thereof, belonging to the technical field of the uncooled infrared focal plane detector. Background technique [0002] With the gradual reduction of pixel size, the target radiation energy absorbed by a single sensor is significantly reduced. In order to maintain a relatively consistent sensor sensitivity, the sensor's responsivity must be increased. The responsivity of the sensor depends on the pixel size, the thermal conductance between the sensor and the substrate, the optical absorption efficiency of the sensor and the performance of the heat-sensitive material. In the traditional double-layer microbridge structure, the first layer is a bridge leg support structure composed of slender bridge legs, which is used to improve the thermal conduction between the sensor and the substrate. The second layer consists of a vanadium oxide layer that absorbs the ...

Claims

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Application Information

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IPC IPC(8): H01L27/146
CPCH01L27/14643H01L27/14683
Inventor 王宏臣邱栋王鹏陈文礼
Owner YANTAI RAYTRON TECH
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