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Application of alkaline polishing solution in inhibition of galvanic couple corrosion of copper-tantalum barrier layer

A technology of galvanic corrosion and polishing solution, applied in the application field of alkaline polishing solution and inhibiting galvanic corrosion of copper-tantalum barrier layer, can solve the problems of not achieving the ideal effect, affecting the reliability of the device, contamination by organic substances, etc. The process is convenient and reasonable, and it is beneficial to remove and reduce the effect of damage layer

Active Publication Date: 2016-12-21
HEBEI UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

They proposed that when the pH is 4, the galvanic corrosion can be inhibited by using the inhibitor benzotriazole (BTA) with large side effects, but the desired effect cannot be achieved, and the existence of BTA makes cleaning after CMP difficult and easy Cause organic contamination and affect device reliability

Method used

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  • Application of alkaline polishing solution in inhibition of galvanic couple corrosion of copper-tantalum barrier layer
  • Application of alkaline polishing solution in inhibition of galvanic couple corrosion of copper-tantalum barrier layer
  • Application of alkaline polishing solution in inhibition of galvanic couple corrosion of copper-tantalum barrier layer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] Take 30gO Ⅱ -7((C 10 h 21 -C 6 h 4 -O-CH 2 CH 2 O) 7 -H) and 5g hydroxyethylethylenediamine, adding it to 200g particle diameter is 50-60nm and mass fraction is 40% SiO 2 In the hydrosol, stir at the same time, and finally make up to 1000g with deionized water to obtain a pH=9 alkaline polishing solution.

[0025] Speed ​​test: use the prepared polishing liquid on Alpsitec-E460E polishing machine, the working pressure is 1psi, the speed of the throwing plate is 93 rpm, the speed of the throwing head is 87 rpm, and the flow rate of the polishing liquid is 300ml / min. A copper sheet (99.99% pure) with a diameter of 3 inches and a thickness of 2mm and a tantalum sheet (99.99% pure) with a diameter of 3 inches and a thickness of 2mm are polished, and the average removal rate of copper and tantalum is measured: copper is 15.3nm / min, tantalum is 22.4nm / min, the removal rate is high, and the rate selection ratio is good. Surface roughness: copper is 0.2nm, tantalum is...

Embodiment 2

[0028] Take 1g O Ⅱ -10((C 10 h 21 -C 6 h 4 -O-CH 2 CH 2 O) 10 -H) and 1g Tetrahydroxyethylethylenediamine, adding it to 300g particle diameter is 50-60nm and mass fraction is 20% SiO 2 Stir simultaneously in the hydrosol, and finally make up to 1000g with deionized water to obtain an alkaline polishing solution.

[0029] Speed ​​test: use the prepared polishing liquid on Alpsitec-E460E polishing machine, the working pressure is 1psi, the speed of the throwing plate is 93 rpm, the speed of the throwing head is 87 rpm, and the flow rate of the polishing liquid is 300ml / min.

[0030] Polish a copper sheet with a diameter of 3 inches and a thickness of 2mm (purity is 99.99%) and a diameter of 3 inches and a thickness of tantalum sheet with a thickness of 2mm (purity is 99.99%), and the average removal rate of copper and tantalum is measured: copper is 83nm / min , Tantalum is 102nm / min, the removal rate is high, and the rate selection ratio is good. Surface roughness: coppe...

Embodiment 3

[0033] Take 10g O 20 (C12-18 h 25-37 -C 6 h 4 -O-CH 2 CH 2 O) 7 -H) and 20g triethanolamine, adding it to 500g particle diameter is 50-60nm and mass fraction is 50% SiO 2 Stir simultaneously in the hydrosol, and finally make up to 1000g with deionized water to obtain an alkaline polishing solution.

[0034] Speed ​​test: use the prepared polishing liquid on Alpsitec-E460E polishing machine, the working pressure is 1psi, the speed of the throwing plate is 93 rpm, the speed of the throwing head is 87 rpm, and the flow rate of the polishing liquid is 300ml / min.

[0035] A copper sheet with a diameter of 3 inches and a thickness of 2mm (purity is 99.99%) and a diameter of 3 inches and a thickness of tantalum sheet with a thickness of 2mm (purity is 99.99%) are polished, and the average removal rate of copper and tantalum is measured: copper is 53nm / min , Tantalum is 62nm / min, the removal rate is high, and the rate selection ratio is good. Surface roughness: copper is 2nm, ...

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Abstract

The invention belongs to the field of chemically mechanical polishing, and in particular, relates to an application of an alkaline polishing solution in inhibition of galvanic couple corrosion of a copper-tantalum barrier layer; the alkaline polishing solution takes a polyhydroxy polyamino compound as a chelating agent and a pH regulator; the mass percentage of the polyhydroxy polyamino compound in the alkaline polishing solution is 0.1%-2%, and the pH value of the alkaline polishing solution is 9-10.5; the polyhydroxy polyamino compound is formed by mixing one or more of hydroxyethyl ethylenediamine, tetrahydroxyethyl-ethylene diamine and triethanolamine. The special hydroxyl and amino containing compound is added in the alkaline polishing solution to be used as a chelating agent, the chelating agent makes the potential of copper in the polishing solution reduced, a passivation layer is formed on the surface of tantalum, and the potential of tantalum in the polishing solution is reduced in a smaller degree, so that the purpose of reducing the potential difference between copper and tantalum is achieved, the corrosion current is reduced, and the corrosion rate is controlled.

Description

technical field [0001] The invention belongs to the field of chemical mechanical polishing, and in particular relates to the application of an alkaline polishing solution in inhibiting galvanic corrosion of a copper-tantalum barrier layer. Background technique [0002] After the double damascene process replaces the traditional metal etching process, in order to prevent Cu ions from entering SiO 2 Impurities become in the medium, and a diffusion barrier layer needs to be deposited on the surface of the medium before Cu electroplating. The barrier layer (such as Ta / TaN) has stable thermal properties and low film resistivity, which can effectively prevent the diffusion of Cu ions to the dielectric layer and improve the adhesion between Cu and the dielectric. With the continuous reduction of device feature size, the continuous improvement of integration level and the continuous increase of wiring layers in GLSI (Great Large Scale IC, very large scale integrated circuit), chemi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09G1/18C23F3/04
CPCC09G1/18C23F3/04
Inventor 王辰伟刘玉岭李月潘国峰檀柏梅
Owner HEBEI UNIV OF TECH
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