Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Preparation method of single-layer ordered silicon dioxide nanosphere array

A technology of silicon dioxide and nanospheres, which is applied in the field of nanostructure preparation, can solve problems such as the irregular arrangement of nanosphere mask layers, and achieve the effects of easy control of process conditions, short cycle time, and simple methods

Inactive Publication Date: 2016-12-14
TIANJIN UNIV
View PDF1 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In order to solve the problems in the prior art, the present invention provides a method for preparing a single-layer ordered silica nanosphere array, which solves the problem of non-uniform arrangement of the nanosphere mask layer in the nanosphere etching technology in the prior art

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of single-layer ordered silicon dioxide nanosphere array
  • Preparation method of single-layer ordered silicon dioxide nanosphere array
  • Preparation method of single-layer ordered silicon dioxide nanosphere array

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] (1) Sapphire cleaning

[0026] The sapphire used is double-polished sapphire with (0001) crystal face purchased on the market, with a thickness of 0.45 mm and a size of 1 cm*1 cm. Put the sapphire chip in deionized water, acetone and absolute ethanol for 20 minutes, respectively, to remove organic impurities on the surface; then wash it with deionized water, and finally put the sapphire substrate in absolute ethanol for later use.

[0027] (2) Cleaning of drainage sheet

[0028] The drainage sheet used is a common glass slide. Put the slides in deionized water, acetone and absolute ethanol in order to ultrasonically clean them for 20 minutes to remove organic impurities on the surface; then wash them with deionized water, and finally put the slides in absolute ethanol for later use.

[0029] (3) Monolayer SiO 2 Preparation of nanospheres

[0030] Purchased SiO with a diameter of 600nm 2 The nanospheres are soaked in absolute ethanol and stored with a density of 0.1...

Embodiment 2

[0033] This embodiment is similar to Embodiment 1, except that the pulling speed in step (3) is 130 μm / min. The prepared SiO 2 The nanosphere arrays are loosely arranged.

Embodiment 3

[0035] The present embodiment is similar to embodiment 1, and the difference is: in step (3) SiO 2 The original solution of nanosphere absolute ethanol and absolute ethanol were remixed at a ratio of 1:3. Use a pipette to pipette the reconstituted SiO 2 -The absolute ethanol solution is added dropwise on the drainage piece, and it is slowly flowed to the water surface, and the SiO2 in the prepared lifting solution is 2 The nanospheres condense into lumps and spread unevenly, and the Al 2 o 3 The substrate is immersed in the pulling liquid, and is pulled out of the liquid surface vertically and slowly. After the pulling is completed, the Al 2 o 3 multilayer SiO 2 nanospheres.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
diameteraaaaaaaaaa
thicknessaaaaaaaaaa
diameteraaaaaaaaaa
Login to View More

Abstract

The invention discloses a preparation method of a single-layer ordered silicon dioxide nanosphere array. The preparation method comprises the following steps of sapphire substrate cleaning; drainage sheet cleaning; single-layer SiO2 nanosphere preparing, wherein a drainage sheet is taken out and obliquely inserted into a certain amount of deionized water, a newly-prepared SiO2-absolute ethyl alcohol solution is dropwise added to the drainage sheet to form a single-layer SiO2 array, then a lifting solution is prepared, after standing is conducted till the liquid level is stable, a Al2O3 substrate is lifted through a coating lifting machine, standing is conducted till the Al2O3 substrate is dried, and then the single-layer SiO2 nanosphere array is formed on the Al2O3 substrate. According to the method, the single-layer ordered silicon dioxide nanosphere array is prepared through a draining, dispersing and lifting method at room temperature, and the prepared SiO2 nanosphere array is single in layer and compact in arrangement, can serve as a mask plate for the following process to prepare the large-area periodic and ordered nanoparticle array and prepare and research biological chips, optical devices and nanometer devices and is short in needed cycle and low in cost.

Description

technical field [0001] The invention relates to the preparation of nanostructures, in particular to a preparation method based on a single-layer ordered silicon dioxide nanosphere array. Background technique [0002] With the development of science and technology, the requirements for the function, reliability and structure complexity of ultra-precision devices are getting higher and higher, which makes electronic devices tend to be miniaturized. With the demand for miniaturization of devices, especially for nano-devices, optical devices, biochips, and high-sensitivity sensors, the micro-nano processing methods have attracted more and more attention. The core of nanotechnology is micro-nano processing technology. As a science and technology that has caused a new industrial revolution, micro-nano processing technology has attracted worldwide attention. In order to systematically study the performance of devices and put them into industrial production, nanofabrication techno...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C04B41/50C04B41/65
CPCC04B41/5072C04B41/65
Inventor 梁继然李景朋宋晓龙周立伟
Owner TIANJIN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products