Gate driving circuit applying SiC power tube for bridge type power converter

Abstract

A gate driving circuit applying a SiC power tube for a bridge type power converter comprises two parts of circuits, wherein the two parts of circuits have same structures, each part of circuit comprises a primary switching circuit, an isolation transformer and a RCD level shift circuit, a traditional coupling isolation transformer is divided to discrete isolation transformers, secondary power tubes are respectively controlled and driven by discrete primary driving circuits, and secondary sides of the isolation transformers are respectively connected in series with a resonant inductor and a level shift circuit. By the gate driving circuit, the driving loss of the resonant gate driving circuit can be greatly reduced, the probability of misconduction of the SiC power tube is reduced, meanwhile, the probability of straight through of an upper tube and a lower tube of the SiC power tube is reduced, and the gate driving circuit is high in reliability and high in efficiency.

Description

technical field [0001] The invention relates to a gate drive circuit of a bridge power converter, in particular to a gate drive circuit of a bridge power converter using a SiC power tube (SiC metal-oxide semiconductor field effect transistor). Background technique [0002] At present, the switching frequency in the power converter is getting higher and higher, and the advantages brought by the increase of the switching frequency are as follows: ① The volume of the energy storage device (inductor, transformer, capacitor, etc.) in the circuit is correspondingly reduced. ②The power density of the whole circuit is further increased. But the increase of switching frequency also brings the increase of switching loss. For the gate drive circuit, it is not only necessary to solve the problem of increased switching loss due to the increase of the switching frequency, but also to solve the related problems related to the false conduction and straight-through of the secondary SiC MOSF...

AI Technical Summary

Problems solved by technology

②The power density of the whole circuit is further increased

[0004] In recent years, many gate drive design schemes mainly focus on solving the problem of excessive switching loss. Although ZVS and ZCS soft switching technologies have been widely used in full-bridge converters, in practical applications, with the switching frequency As the increase, a large number of driving losses still exist and thus cause the phenomenon of reduced power and reliability

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