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Method for preparing graphene electrode in high-temperature piezoelectric sensor

A graphene electrode, high temperature piezoelectric technology, applied in gaseous chemical plating, metal material coating process, coating and other directions, can solve the problems of general performance and high price of electrode materials, and save the film transfer process and price. Expensive, low temperature effects

Inactive Publication Date: 2016-12-07
JIANGNAN GRAPHENE RES INST
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Technical problem: In order to solve the problems of general and expensive electrode material performance in the defective high-temperature piezoelectric sensor of the prior art, the present invention provides a method for preparing a graphene electrode material with excellent electrical conductivity, good thermal stability and abundant raw materials

Method used

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Examples

Experimental program
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Effect test

Embodiment 1

[0022] Sonicate the ground and polished BTS wafer with deionized water, acetone, and ethanol for 10 minutes, take out the wafer, and compress it with N 2 Put the gas into the plasma chemical vapor deposition chamber after drying its surface, close the chamber, and start the vacuum pump; until the air pressure in the chamber drops to 10 -5 Below Torr, pass Ar and CH 4 Gas, control Ar gas flow to 100sccm, CH 4 The flow rate was 10 sccm and the pressure in the conditioning chamber was 1 Torr. Start the heating power supply of the chemical deposition chamber, and set the temperature rise program as follows: the room temperature is raised to 400°C, and the temperature is kept constant for 15 minutes; the heating rate is 10°C / min, and the constant temperature is 25 minutes at 250°C; the plasma source is turned on, and the constant temperature is deposited at 400°C for 30 minutes, and the obtained Graphene electrodes.

[0023] The adhesion between the graphene electrode and the hi...

Embodiment 2

[0025] Sonicate the ground and polished LGS wafer with deionized water, acetone, and ethanol for 15 minutes, take out the wafer, and compress it with N 2 Put the gas into the plasma chemical vapor deposition chamber after drying its surface, close the chamber, and start the vacuum pump; until the air pressure in the chamber drops to 10 -5 Below Torr, pass Ar and CH 4 Gas, control Ar gas flow to 75sccm, CH 4 The flow rate was 25 sccm and the pressure in the conditioning chamber was 0.5 Torr. Start the heating power supply of the chemical deposition chamber, and set the heating program as follows: the room temperature is raised to 700°C, and the temperature is kept constant for 20 minutes; Deposit for 80min to obtain a graphene electrode.

[0026] The adhesion between the graphene electrode and the high-temperature piezoelectric chip is strong, and it is found that there is almost no graphene peeling off after repeated adhesive tape. After testing, the resistivity of the gra...

Embodiment 3

[0028] Sonicate the ground and polished LGT wafer with deionized water, acetone, and ethanol for 12 minutes, take out the wafer, and compress it with N 2 Put the gas into the plasma chemical vapor deposition chamber after drying its surface, close the chamber, and start the vacuum pump; until the air pressure in the chamber drops to 10 -5 Below Torr, pass into Ar and C 2 h 6 Gas, control Ar gas flow to 50sccm, C 2 h 6 The flow rate was 50 sccm and the pressure in the conditioning chamber was 0.05 Torr. Start the heating power supply of the chemical deposition chamber, and set the heating program as follows: the room temperature is raised to 500°C, and the temperature is kept constant for 18 minutes; the heating rate is 20°C / min, and the temperature is kept at 250°C for 25 minutes; the plasma source is turned on, and the constant temperature is deposited at 500°C for 150 minutes, and Graphene electrodes.

[0029] The adhesion between the graphene electrode and the high-tempe...

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Abstract

The invention provides a method for preparing a graphene electrode in a high-temperature piezoelectric sensor. The method includes the following steps that a pretreated high-temperature piezoelectric crystal plate of the high-temperature piezoelectric sensor is placed into a plasma chemical vapor deposition cavity, the cavity is closed, and a vacuum pump is started; when air pressure inside the cavity is lowered to 10<-5> Torr or below, shielding gas and carbureted hydrogen gas are connected in to adjust the pressure intensity inside the cavity; and a vacuum reacting furnace is started for heating and warming, a plasma source is switched on to perform constant temperature deposition, and accordingly the graphene electrode can be obtained. According to the preparation method of the graphene electrode, the high-temperature piezoelectric crystal plate is used as a substrate, a small or large number of layers of graphene are grown on the surface of the crystal plate without metal catalysis as the electrode through the plasma enhanced chemical vapor deposition (PECVD) technique directly, adhesive force between a graphene thin film and the crystal plate is good, and electrical conductivity of the graphene thin film is excellent.

Description

technical field [0001] The invention belongs to the field of piezoelectric sensor materials, and in particular relates to a method for preparing a graphene electrode in a high-temperature piezoelectric sensor. Background technique [0002] Due to the difficulty of power supply and wire connection in high temperature environment, it is difficult for electronic circuits to work normally, and the use of conventional sensors is limited. Therefore, it is necessary to research and develop wireless passive sensing technology suitable for use in high temperature environment. Piezoelectric sensors are devices based on the piezoelectric effect. Piezoelectric sensors are widely used in production and life; high-temperature piezoelectric sensing elements made of piezoelectric crystals are used in aerospace, national defense and civil applications. important role. Electrode materials in high-temperature piezoelectric sensors usually use noble metals such as Pt, Ir or Pd as conductive el...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/26C23C16/513C23C16/02
CPCC23C16/0227C23C16/0254C23C16/26C23C16/513
Inventor 沈丽明郭国标吉成何大方暴宁钟
Owner JIANGNAN GRAPHENE RES INST
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