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Preparation method of anodic tantalum block capable of reducing change rate of capacity of tantalum capacitor

A technology of capacity change and tantalum capacitors, which is applied in the field of preparation of anode tantalum blocks, can solve the problem that the accuracy of capacitor capacity changes is also stricter, and achieve the effect of increasing the sintering temperature

Inactive Publication Date: 2016-11-23
CHINA ZHENHUA GRP XINYUN ELECTRONICS COMP ANDDEV CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

With the improvement of the implementation standards of tantalum capacitors, the requirements for the accuracy of capacitor capacity changes are also stricter, which makes the production of such capacitors face severe challenges.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0017] A method for preparing an anode tantalum block capable of reducing the capacity change rate of a tantalum capacitor, comprising the following steps:

[0018] (1) According to the production principle of the non-solid tantalum capacitor, the tantalum powder used for forming the anode tantalum block is selected, and the specific volume of the tantalum powder is;

[0019] (2) Since the breakdown voltage of tantalum powder with a specific volume of 15000μF·V / g is about 180V, and the rated voltage of the product is 75V, the formation voltage of the anode tantalum block is designed to be 120V, and the external dimensions are based on this specification. set as According to the conventional compaction density range of this kind of tantalum powder is 5 ~ 6g / cm 3 Set the compacted density to 5.5g / cm 3 ;

[0020] (3) using the tantalum powder selected in step (1), and pressing to form an anode tantalum block according to the relevant parameters in step (2);

[0021] (4) Vacu...

Embodiment 2

[0027] A method for preparing an anode tantalum block capable of reducing the capacity change rate of a tantalum capacitor, comprising the following steps:

[0028] (1) According to the production principle of non-solid tantalum capacitors, the tantalum powder used for forming the anode tantalum block is selected, and the specific volume of the tantalum powder is FTP150;

[0029] (2) Since the breakdown voltage of tantalum powder with a specific volume of 15000μF·V / g is about 180V, and the rated voltage of the product is 75V, the formation voltage of the anode tantalum block is designed to be 120V, and the external dimensions are based on this specification. set as According to the conventional compaction density range of this kind of tantalum powder is 5 ~ 6g / cm 3 Set the compacted density to 5.5g / cm 3 ;

[0030] (3) using the tantalum powder selected in step (1), and pressing to form an anode tantalum block according to the relevant parameters in step (2);

[0031] (4) ...

Embodiment 3

[0036] A method for preparing an anode tantalum block capable of reducing the capacity change rate of a tantalum capacitor, comprising the following steps:

[0037] (1) According to the production principle of non-solid tantalum capacitors, the tantalum powder used for forming the anode tantalum block is selected, and the specific volume of the tantalum powder is FTP150;

[0038] (2) Since the breakdown voltage of tantalum powder with a specific volume of 15000μF·V / g is about 180V, and the rated voltage of the product is 75V, the formation voltage of the anode tantalum block is designed to be 120V, and the external dimensions are based on this specification. set as According to the conventional compaction density range of this kind of tantalum powder is 5 ~ 6g / cm 3 Set the compacted density to 5.5g / cm 3 ;

[0039] (3) using the tantalum powder selected in step (1), and pressing to form an anode tantalum block according to the relevant parameters in step (2);

[0040] (4) ...

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Abstract

The present invention provides a preparation method of an anodic tantalum block capable of reducing the change rate of a capacity of tantalum capacitor. The method includes the following steps that: (1) tantalum powder for anodic tantalum block molding is selected; (2) the forming voltage and upper-limit compaction density of the anodic tantalum block are designed, and corresponding specification parameters of the anodic tantalum block are designed; (3) the tantalum powder selected in the step (1) is pressed according to the related parameters in the step (2), so that the anodic tantalum block can be formed; and vacuum sintering is performed on the molded anodic tantalum block. According to the preparation method of the invention, in the allowed range of the manufacturing techniques of the product, the actual density of the anodic tantalum block is increased, or the sintering temperature of the anodic tantalum block is increased, or the specific volume of the sintered anodic tantalum block is decreased, and therefore, the change rate of the capacity of the non-solid tantalum electrolytic capacitor under 125 DEG C can be effectively decreased, and thus, the problem of large change of the capacity of the non-solid tantalum electrolytic capacitor under high temperature can be solved, and a manufacturing guarantee can be provided for high-precision requirements of the market for this kind of products.

Description

technical field [0001] The invention belongs to the technical field of manufacturing non-solid electrolyte tantalum capacitors, and in particular relates to a method for preparing an anode tantalum block that can reduce the capacity change rate of a tantalum capacitor. Background technique [0002] The capacity change rate of tantalum electrolytic capacitors is restricted by many factors, especially the content of the working electrolyte directly affects the capacity change rate. Tantalum electrolytic capacitors are widely used in various civil and military electronic products due to their small size, large capacity, small leakage current, low loss, long life and many other excellent properties. With the development and deepening of the industrial revolution, the accuracy requirements for components are becoming more and more stringent. As an important member of components, the capacitors have higher and higher requirements for capacity accuracy, especially for non-solid tan...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01G9/042H01G9/052
Inventor 曾金萍李康王兴伟李传龙石洪富肖毅王成兴高智红
Owner CHINA ZHENHUA GRP XINYUN ELECTRONICS COMP ANDDEV CO LTD
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