A surface passivation method for crystalline silicon solar cells with adjustable charge density
A solar cell and charge density technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problem that the charge cannot be adjusted arbitrarily, and achieve the effects of easy upgrade, easy mass production, and small process changes
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[0042] The specific embodiments of the present invention will be further described below in conjunction with the accompanying drawings.
[0043] Such as figure 1 As shown, it is a schematic diagram of the position of the quantum well nano-stack in the solar cell, and the solar cell is provided with a quantum well nano-stack 3 between the silicon substrate 1 and the electrode 2 .
[0044] After the production steps of diffusion and etching, the laminated films required for quantum wells are deposited in one go by ALD. If the electrode material is opaque (such as metal), the quantum well stacked film structure is formed on the back of the battery (non-light-receiving surface). If the electrode material is transparent (such as a metal oxide transparent electrode), the quantum well stacked film structure can be formed on the front or back of the battery. After the film is plated, holes need to be opened on the film, and then the electrode material is plated to form a battery.
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